Electrostatic chuck
An electrostatic chuck for attracting and holding a substrate by using an electrostatic force includes a plurality of protrusion portions to be brought into contact with the substrate. The protrusion portions are formed of a ceramic dielectric including grains each having a specified particle diameter, and contact surfaces of the protrusion portions with the substrate are formed to have a surface roughness depending on the particle diameter.
1. An electrostatic chuck for attracting and holding a substrate by using an electrostatic force, comprising:
a plurality of protrusion portions to be brought into contact with the substrate,
wherein the protrusion portions are formed of a ceramic dielectric including grains, and contact surfaces of the protrusion portions contacting with the substrate are formed to have an initial surface roughness which is determined depending on an average particle diameter of the grains, and
wherein the initial surface roughness is a surface roughness of the contact surfaces before the electrostatic chuck is initially subjected to a plasma cleaning process and a surface roughness of the contact surfaces is maintained to be substantially identical to the initial surface roughness even after the electrostatic chuck is repeatedly subjected to plasma cleaning processes.
2. The electrostatic chuck of claim 1 , wherein the average particle diameter ranges from 1 to 2 μm and the surface roughness of the contact surfaces ranges from Ra 0.2 to 0.3 μm.
3. The electrostatic chuck of claim 1 , wherein a principal component of the ceramic dielectric is aluminum oxide.
4. The electrostatic chuck of claim 3 , wherein the ceramic dielectric includes silicon carbide.
5. The electrostatic chuck of claim 1 , wherein the protrusion portions are set to have a hardness of Vicker's hardness Hv2000 or greater.
6. The electrostatic chuck of claim 1 , wherein a contact area percentage of the protrusion portions per unit area of the substrate is set to be not greater than 15%.
7. The electrostatic chuck of claim 1 , wherein the protrusion portions are formed of columnar protrusions, each having a diameter of 0.5 mm or less.
8. The electrostatic chuck of claim 1 , wherein a distance between the protrusion portions is set to be not greater than 1 mm.
9. The electrostatic chuck of claim 1 , wherein the protrusion portions are set to have a height of 30 μm or greater.
10. An electrostatic chuck for attracting and holding a substrate by using an electrostatic force, comprising:
a first annular projection portion and a second annular projection portion respectively formed at an outer peripheral portion and an inner portion of the electrostatic chuck, the first annular projection portion and the second annular projection portion being brought into contact with the substrate; and
first and second gas supply ports provided in a first region formed between the first annular projection portion and the second annular projection portion, and in a second region formed inside the second annular projection portion, respectively, a thermally conductive gas being supplied into the first region and the second region via the first and the second gas supply ports, respectively;
wherein the first and the second region have a plurality of first and second protrusion portions different from the first annular projection portion and the second annular projection portion, respectively, and the first and the second protrusion portions are different from each other in at least one of a contact area per unit area with the substrate, a density and a height.
11. The electrostatic chuck of claim 10 , wherein a percentage of the contact area per unit area between the first protrusion portions and the substrate is set to be greater than that of the contact area per unit area between the second protrusion portions and the substrate.
12. The electrostatic chuck of claim 11 , wherein the percentage of the contact area between the second protrusion portions and the substrate is set to be not greater than 15%.
13. The electrostatic chuck of claim 10 , wherein the first protrusion portions are set to have a height lower than that of the second protrusion portions.
14. The electrostatic chuck of claim 10 , wherein the second protrusion portions are set to have a height of 30 μm or greater.
15. The electrostatic chuck of claim 10 , wherein the density of the first protrusion portions is set to be greater than that of the second protrusion portions.
16. The electrostatic chuck of claim 10 , wherein each of the first and the second protrusion portions has a columnar shape with a same diameter of 0.5 mm or less.