Enhanced mechanical strength via contacts
View Patent ↗The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.
1. An interconnect structure comprising:
a first dielectric layer having at least one metallic interconnect embedded therein;
a second dielectric layer located atop said first dielectric layer, wherein said second dielectric layer has at least one aperture having an upper line region and a lower via region;
a first liner located atop the vertical and horizontal walls of said at least one aperture and said at least one metallic interconnect, wherein said first liner is substantially absent from a bottom wall of said lower via region;
a first conductive material partially filling said at least one aperture;
a second liner located atop the remaining vertical and horizontal walls of said at least one aperture and said first conductive material; and
a second conductive material filling said remaining vertical and horizontal walls of said at least one aperture.
2. The interconnect structure of claim 1 wherein said metallic interconnect comprises a conductive metal or metal alloy.
3. The interconnect structure of claim 2 wherein said metal is Cu, W or Al.
4. The interconnect structure of claim 1 wherein said metallic interconnect comprises Cu.
5. The interconnect structure of claim 1 wherein said first dielectric layer has a dielectric constant of about 4.0 or less.
6. The interconnect structure of claim 5 wherein said first dielectric layer comprises SiO2, a polyarylene resin, or an organosilicate glass.
7. The interconnect structure of claim 1 further comprising a patterned cap layer on a surface of said first dielectric layer, said patterned cap layer having an opening that exposes a surface portion of said metallic interconnect.
8. The interconnect structure of claim 7 wherein said patterned cap layer comprises a silicon nitride, silicon oxynitride, silicon carbide, or a combination thereof.
9. The interconnect structure of claim 1 wherein said second dielectric layer has a dielectric constant of about 4.0 or less.
10. The interconnect structure of claim 9 wherein said second dielectric layer comprises SiO2, a polyarylene resin, or an organosilicate glass.
11. The interconnect structure of claim 1 further comprising a patterned hard mask on a surface of said second dielectric layer.
12. The interconnect structure of claim 11 wherein said patterned hard mask comprises a nitride, oxynitride or a combination thereof.
13. The interconnect structure of claim 1 wherein said first and second liners comprise the same or different diffusion resistant material selected from the group consisting of refractory metals, refractory metal nitrides, Ru, RuTa, RuTaN, Ir, Rh, Pt and TiNSi.
14. The interconnect structure of claim 1 wherein said first liner extends over a surface portion of the metallic interconnect.
15. The interconnect structure of claim 1 wherein said first and second conductive materials are selected from a group consisting of Cu, Al and CuAl.
16. The interconnect structure of claim 1 wherein said first and second conductive materials comprise Cu.
17. The interconnect structure of claim 1 further comprising a third conductive material partially filling said at least one aperture; and
a third liner located atop the remaining vertical and horizontal walls of said at least one aperture and said third conductive material.
18. The interconnect structure of claim 17 further comprising multiple conductive material partially filling said at least one aperture; and
multiple liners embedded in the interconnect structure atop said multiple conductive material partially filling said at least one aperture.