Method and system for forming a thin film device

1. A method of forming a thin film device on a substrate, comprising:

depositing an imprintable material over the substrate;

stamping the imprintable material forming a three-dimensional pattern in the imprintable material;

forming a distinct sacrificial layer over the three-dimensional pattern;

depositing a conductive layer over the distinct sacrificial layer;

removing the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;

depositing a gate layer over the substrate;

depositing a gate dielectric over the gate layer; and

depositing a channel material over the gate dielectric.

2. The method of claim 1 further comprising:

etching the channel material before forming the distinct sacrificial layer.

3. The method of claim 1 , wherein forming a distinct sacrificial layer comprises:

depositing a polymer over the three-dimensional pattern;

thinning the polymer;

etching the polymer and imprintable material according to the three-dimensional pattern.

4. The method of claim 1 , wherein forming a distinct sacrificial layer comprises:

applying spin on glass over the three-dimensional pattern;

thinning the glass; etching the glass and

imprintable material according to the three-dimensional pattern.

5. The method of claim 1 , wherein forming a distinct sacrificial layer comprises:

depositing a polymer over the three-dimensional pattern; applying spin on glass over the polymer;

thinning the glass; etching the polymer and

imprintable material according to the three-dimensional pattern.

6. The method of claim 1 , further comprising:

depositing the gate layer and the gate dielectric over the three-dimensional patterned imprintable material.

7. The method of claim 6 , further comprising forming a patterned gate electrode over the three-dimensional patterned imprintable material before depositing the gate dielectric over the three-dimensional patterned imprintable material.

8. The method of claim 7 , further comprising:

planarizing the three-dimensional patterned imprintable material with a polymer;

etching the polymer exposing a top portion of the three-dimensional patterned imprintable material;

depositing a gate electrode over the polymer and exposed top portion;

dissolving the polymer leaving the patterned gate electrode over the top portion.

9. The method of claim 6 , wherein forming the distinct sacrificial layer comprises:

forming a second distinct sacrificial layer;

forming a third distinct sacrificial layer.

10. The method of claim 9 , wherein forming the second distinct sacrificial layer comprise:

depositing a planarization layer;

depositing a channel layer;

dissolving the planarization layer.

11. The method of claim 9 , wherein forming a second sacrificial layer comprises:

depositing the second distinct sacrificial layer;

planarizing and etching the second sacrificial layer;

etching the second distinct sacrificial layer and removing first planarization layer;

depositing a channel layer;

dissolving the second distinct sacrificial layer.

12. The method of claim 9 , wherein forming a third distinct sacrificial layer comprises:

depositing the third distinct sacrificial layer;

planarizing and etching the third distinct sacrificial layer;

removing second planarization layer;

planarizing and etching;

depositing a fourth distinct sacrificial layer.

13. The method of claim 1 , wherein the substrate is transparent and the conductive layer is transparent; and comprises INSnO.

14. The method of claim 1 , wherein the channel material comprises ZnO.

15. The method of claim 1 , wherein effectively no portion of the distinct sacrificial layer remains as part of the formed thin film device.

16. The method of claim 1 , wherein the distinct sacrificial layer is not a sub-portion of at least one other thin film device layer providing an element remaining as part of the formed thin film device.

17. A system for fabricating a transparent thin film transistor over a flexible substrate comprising:

means for depositing an imprintable material over the flexible substrate;

means for stamping the imprintable material forming a three-dimensional pattern in the imprintable material;

means for forming a distinct sacrificial layer over the three-dimensional pattern; and

means for depositing a conductive layer over the distinct sacrificial layer; and means for dissolving effectively all of the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;

means for depositing a gate layer over the substrate;

means for depositing a gate dielectric over the gate layer; and

means for depositing a channel material over the gate dielectric.

18. A method of forming a thin film device on a substrate, comprising:

depositing an imprintable material over the substrate;

stamping the imprintable material forming a three-dimensional pattern in the imprintable material;

forming a distinct sacrificial layer over the three-dimensional pattern;

depositing a etch-resistant conductive layer over the distinct sacrificial layer;

removing effectively all of the distinct sacrificial layer, leaving portions of the etch-resistant conductive layer as thin film device conductors as defined by the three-dimensional pattern;

depositing a gate layer over the substrate;

depositing a gate dielectric over the gate layer; and

depositing a channel material over the gate dielectric.

19. A method of forming a thin film device on a substrate, comprising:

depositing at least one thin film device layer upon the substrate;

depositing an imprintable material over the at least one thin film device layer

stamping the imprintable material forming a three-dimensional patterin in the imprintable material;

forming a distinct sacrificial layer over the three-dimensional pattern, the distinct sacrificial layer a separate structure form the at least one thin film device layer;

depositing a conductive layer over the distinct sacrificial layer; and

removing effectively all of the distinct sacrificial layer, leaving portions of the conductive layer as defined by the three-dimensional pattern;

depositing a gate layer over the substrate;

depositing a gate dielectric over the gate layer; and

depositing a channel material over the gate dielectric.