Semiconductor device and manufacturing method of the same
To provide a semiconductor device capable of improving accuracy in finishing a hole in which a conductive plug right under a capacitor, and a manufacturing method of such a semiconductor device comprising the following steps: a step of forming first and second conductive plugs 32 a , 32 b in first and second holes 11 a , 11 b in a first insulating film 11 ; a step of forming a first opening 14 a in an oxidation preventing insulating film 14 ; a step of forming an auxiliary conductive plug 36 a in the first opening 14 a ; a step of forming a capacitor Q on the auxiliary conductive plug 36 a ; a step of forming third and fourth holes 41 a , 41 b in a second insulating film 41 covering the capacitor Q; a step of forming the second opening 14 b in the oxidation preventing insulating film 14 under the fourth hole 41 b ; a step of forming a third conductive plug 47 a in the third hole 41 a ; and a step of forming a fourth conductive plug 47 b in the third hole 41 a.
1. A manufacturing method of a semiconductor device, comprising the steps of:
forming first and second impurity diffusion regions at an interval from each other in a surface layer of a semiconductor substrate;
forming a first insulating film over said semiconductor substrate;
forming first and second holes in said first insulating film above said first and second impurity diffusion regions respectively by pattering said first insulating film;
forming first and second conductive plugs electrically connected to said first and second impurity diffusion regions respectively in said first and second holes;
forming an oxidation preventing insulating film on said first insulating film and on said first and second conductive plugs;
forming a first opening in said oxidation preventing insulating film above said first conductive plug by removing said oxidation preventing insulating film from above said first conductive plug;
forming a conductive film on said oxidation preventing insulating film and in said first opening above said first conductive plug; polishing said conductive film to remove said conductive film from said oxidation preventing insulating film, while leaving said conductive film in said first opening as an auxiliary conductive plug; forming a capacitor by stacking a lower electrode, a capacitor dielectric film and an upper electrode in this order on said auxiliary conductive plug and on said oxidation preventing insulating film located around said first opening;
forming a second insulating film covering said capacitor; forming a third hole in said second insulating film above said upper electrode by patterning said second insulating film;
forming a fourth hole in said second insulating film above said second hole by patterning said second insulating film, and further forming a second opening in said oxidation preventing insulating film under said fourth hole;
forming a third conductive plug electrically connected to said upper electrode in said third hole; and
forming a fourth conductive plug in said fourth hole and said second opening to electrically connected to said second conductive plug.
2. The manufacturing method of a semiconductor device according to claim 1 ,
wherein in the step of forming said oxidation preventing insulating film, said oxidation preventing insulating film is formed to be thinner than said first insulating film.
3. The manufacturing method of a semiconductor device according to claim 1 ,
wherein said conductive film consists of any one of: a laminated film of barrier metal film and tungsten film; a single layer of titanium nitride film; and a single layer of titanium aluminum nitride film.
4. The manufacturing method of a semiconductor device according to claim 1 ,
wherein the oxidation preventing insulating film consists of any one of: a silicon oxide nitride film, a silicon nitride film, and an alumina film.
5. The manufacturing method of a semiconductor device according to claim 1 , further comprising a step of forming an insulating adhesive film on said oxidation preventing insulating film, after forming said oxidation preventing insulating film, wherein said lower electrode and said second insulating film are formed on said insulating adhesive film.
6. The manufacturing method of a semiconductor device according to claim 1 ,
wherein, after forming said fourth hole, annealing said capacitor dielectric film in oxygen atmosphere, and after said annealing forming said second opening.