Method of calculating deflection aberration correcting voltage and charged particle beam writing method
A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.
1. A method of obtaining a deflection aberration correcting voltage, comprising:
writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable for each of the plurality of focus height positions;
measuring dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable for each of the plurality of focus height positions;
calculating effective resolutions of the written predetermined patterns by using the dimensional variations; and
on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage, wherein the correcting voltage is used when a charged particle beam is deflected.
2. The method according to claim 1 , wherein
patterns having widths in an x direction and a y direction are used as the predetermined patterns.
3. The method according to claim 2 , wherein
directions at 0° and 90° are used as the x direction and the y direction.
4. The method according to claim 2 , wherein
directions at 45° and 135° are used as the x direction and the y direction.
5. The method according to claim 2 , wherein
in calculation of the effective resolutions, the effective resolutions in the x direction and the y direction are calculated.
6. The method according to claim 5 , wherein
effective resolutions in directions at 0° and 90° are calculated.
7. The method according to claim 5 , wherein
effective resolutions in directions at 45° and 135° are calculated.
8. The method according to claim 5 , wherein
in calculation of the correcting voltage, correcting voltages to correct field curvature and astigmatism aberration as the deflection aberration are calculated.
9. The method according to claim 1 , wherein
as the predetermined patterns, a first pattern having widths in the directions at 0° and 90° and a second pattern having widths in directions at 45° and 135° are used.
10. The method according to claim 9 , wherein
in calculation of the effective resolutions, effective resolutions in the directions at 0° and 90° and effective resolutions in the directions at 45° and 135° are calculated.
11. The method according to claim 10 , wherein in calculation of the correcting voltage, correcting voltages to correct field curvature and astigmatism aberration in the directions at 0° and 90° as the deflection aberration and correcting voltages to correct field curvature and astigmatism aberration in the directions at 45° and 135° as the deflection aberration are calculated.
12. The method according to claim 1 , further comprising:
acquiring an iso focal dose by using a plurality of focus height positions and a plurality of doses;
wherein the predetermined patterns write at a exposure dose of the charged particle beam instead of the iso focal dose.
13. A charged particle beam writing method comprising:
writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable for each of the plurality of focus height positions;
on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable for each of the plurality of focus height positions is obtained, calculating a correcting voltage to correct deflection aberration when a charged particle beam is deflected; and
by using the correcting voltage, deflecting the charged particle beam to write a desired pattern on a target object.
14. The charged particle beam writing method according to claim 13 , wherein
in calculation of the correcting voltage, correcting voltages to correct deflection aberration in directions at 45° and 135° are calculated, and the charged particle beam variably shaped in a beam shape having an angle of 45° by an aperture is deflected.