Nanometer-scale lithography using extreme ultraviolet/soft x-ray laser interferometry
View Patent ↗Direct patterning of nanometer scale features by interferometric lithography using a 46.9 nm laser is described. Multiple exposures using a Lloyd's mirror interferometer permitted printing of arrays having 60 nm FWHM features.
1. Apparatus for nanometer-scale lithographic patterning of a photosensitive surface of a sample, comprising in combination:
a chamber capable of being evacuated;
pump means for evacuating said chamber to a chosen pressure;
a source of pulsed laser radiation having a chosen wavelength in the range between 1 nm and 100 nm, and a chosen fluence, wherein the pulsed laser radiation is directed into said chamber;
means disposed within said chamber for generating a chosen interference pattern at a chosen reference plane from the pulsed laser radiation and perpendicular thereto; and
means for positioning said sample within said chamber at the chosen reference plane such that the photosensitive surface is exposed to the interference pattern, whereby the interference pattern is generated on the photosensitive surface of said sample.
2. The apparatus described in claim 1 , wherein said means for generating an interference pattern forms two mutually coherent light beams having a chosen angle of intersection at the reference plane from the pulsed laser radiation.
3. The apparatus described in claim 2 , wherein said means for generating an interference pattern comprises a flat mirror disposed in a Lloyd configuration.
4. The apparatus described in claim 2 , wherein said means for generating an interference pattern comprises: a diffraction grating for receiving the pulsed laser radiation and for splitting the laser radiation into a first light beam and a second light beam, the first light beam and the second light beam being mutually coherent; a beam stop for blocking light emerging from said grating not included in said first light beam and said second light beam; a first folding mirror for receiving the first light beam and reflecting the first light beam in a first chosen direction; and a second, opposing folding mirror for receiving the second light beam and reflecting the second light beam in a second chosen direction, whereby the first light beam and the second light beam interfere at the reference plane.
5. The apparatus described in claim 1 , wherein said means for positioning said sample within said chamber at the chosen reference plane such that the photoresist surface is exposed to the interference pattern, further comprises means for rotating said photoresist surface of said sample a chosen angle in the reference plane.
6. The apparatus described in claim 5 , wherein said lithographic pattern comprises the periodic structures in said photosensitive material surface of said sample comprise parallel lines resulting from a chosen number of first laser pulses, the photosensitive material surface of said sample then being rotated a chosen angle with respect to the parallel lines and exposed a chosen number of second laser pulses.
7. The apparatus described in claim 6 , wherein the chosen angle is 90°.
8. The apparatus described in claim 1 , wherein said source of laser radiation comprises a capillary discharge x-ray laser.
9. The apparatus described in claim 8 , wherein the chosen wavelength comprises 46.9 nm from the 26.4 eV transition of neon-like Ar ions.
10. The apparatus described in claim 9 , wherein the chosen fluence of said source of pulsed laser radiation is controlled by passing the pulsed laser radiation through atoms at a chosen pressure having a lower ionization energy than 26.4 eV.
11. A method for nanometer-scale lithographic patterning of a photoresist surface of a sample, comprising the steps of:
directing pulsed laser radiation having a chosen wavelength in the range between 1 nm and 100 nm and a chosen intensity into a vacuum chamber below atmospheric pressure;
generating a chosen interference pattern at a chosen reference plane from the pulsed laser radiation and perpendicular thereto; and
exposing the photosensitive surface of the sample to the interference pattern in the reference plane in the vacuum chamber, whereby the interference pattern is generated on the photoresist surface of said sample.
12. The method described in claim 11 , wherein said step of generating an interference pattern is achieved by forming two mutually coherent light beams having a chosen angle of intersection at the reference plane from the pulsed laser radiation.
13. The method described in claim 12 , wherein said step of forming two mutually coherent light beams having a chosen angle of intersection at the reference plane comprises using a flat mirror disposed in a Lloyd configuration.
14. The method described in claim 12 , wherein said step of forming two mutually coherent light beams having a chosen angle of intersection at the reference plane comprises splitting the pulsed laser radiation into a first light beam and a second light beam using a diffraction grating, the first light beam and the second light beam being mutually coherent; and recombining the first light beam and the second light beam using a first folding mirror and a second folding mirror, respectively, whereby the first light beam and the second light beam interfere at the reference plane.
15. The method described in claim 12 , further comprising the steps of choosing the angle of intersection of the light beams at the reference plane to achieve a desired periodicity of said patterning; and selecting the chosen intensity the pulsed laser radiation to achieve desired dimensions of said patterning.
16. The method described in claim 12 , wherein said step of exposing the photoresist surface of the sample to the interference pattern further comprises rotating the photoresist surface of the sample a chosen angle in the reference plane between exposing steps.
17. The method described in claim 16 , wherein the chosen angle is 90°.
18. The method described in claim 12 , wherein said step of directing pulsed laser radiation comprises using a capillary discharge x-ray laser, wherein the chosen wavelength comprises 46.9 nm from the 26.4 eV transition of neon-like Ar ions.
19. The method described in claim 18 , wherein the chosen fluence is controlled by passing the pulsed laser radiation through atoms at a chosen pressure having a lower ionization energy than 26.4 eV.