Stacked semiconductor package that prevents damage to semiconductor chip when wire-bonding and method for manufacturing the same
A stacked semiconductor package includes a substrate having first and second contact pads. A first stacked package group is disposed on the substrate, and the first stacked package group includes first semiconductor chips stacked in a stair form to expose first edge bonding pads. First conductive wires are used to electrically couple the first edge bonding pads and the first contact pads. An adhesive member is disposed on the uppermost first semiconductor chip, and a second stacked package group is disposed on the adhesive member. The second stacked package group includes second semiconductor chips that are stacked in a stair form to expose second edge bonding pads. When the second stacked package group is disposed on the adhesive member, the bottommost second semiconductor chips is aligned with the uppermost first semiconductor chip. Second conductive wires are used to electrically couple the second edge bonding pads and the second contact pads.
1. A stacked semiconductor package comprising:
a substrate having first contact pads and second contact pads;
a first stacked package group disposed on the substrate and comprising a plurality of first semiconductor chips, each first semiconductor chip having a plurality of first edge bonding pads formed on a first edge of an upper surface of the semiconductor chip, wherein the first semiconductor chips are stacked such that the first semiconductor chips overlap in a stair form to expose the first edge bonding pads;
first conductive wires electrically coupling the first edge bonding pads and the first contact pads;
an adhesive member disposed on an uppermost first semiconductor chip;
a second stacked package group disposed on the adhesive member and comprising second semiconductor chips having a plurality of second edge bonding pads formed on a second edge of an upper surface of the second semiconductor chips, wherein the second semiconductor chips are stacked to overlap in a stair form to expose the second edge bonding pads;
wherein a lowermost second semiconductor chip is aligned with the uppermost first semiconductor chip; and
second conductive wires electrically coupling the second edge bonding pads and the second contact pads.
2. The stacked semiconductor package according to claim 1 , wherein the first edge of the first semiconductor chip is opposite to the second edge of the second semiconductor chip, and the first semiconductor chips are attached in a stair form along a first direction and the second semiconductor chips are attached in a stair form along a second direction opposed to the first direction.
3. The stacked semiconductor package according to claim 1 , wherein the first stacked package group further comprises first adhesive members with a first thickness are interposed between the first semiconductor chips, and the second stacked package group further comprises second adhesive members with the first thickness are interposed between the second semiconductor chips.
4. The stacked semiconductor package according to claim 3 , wherein the adhesive member disposed on the uppermost first semiconductor chip has a second thickness and the second thickness of the adhesive member is thicker than the first thickness of the second adhesive members.
5. The stacked semiconductor package according to claim 1 , wherein a plurality of first stacked semiconductor package groups and second stacked semiconductor package groups are alternately disposed.
6. The stacked semiconductor package according to claim 1 , wherein the adhesive member of the stacked semiconductor package covers a loop portion of the first conductive wire.
7. A method for manufacturing a stacked semiconductor package comprising the steps of:
forming a first stacked package group by stacking first semiconductor chips such that the first semiconductor chips overlap in a stair form on a substrate comprising first contact pads and second contact pads, wherein the first semiconductor chips comprise first edge bonding pads formed on a first edge of an upper surface of the first semiconductor chip, and wherein the first edge bonding pads are exposed;
electrically coupling the first edge bonding pads and the first contact pads by means of first conductive wires;
forming an adhesive member on an uppermost first semiconductor chip;
forming a second stacked package group by stacking second semiconductor chips such that the second semiconductor chips overlap in a stair form on the adhesive member, wherein the second semiconductor chips comprise second edge bonding pads formed on a second edge of an upper surface of the second semiconductor chip, and wherein the second edge bonding pads are exposed;
wherein, when forming the second stacked package group, a lowermost second semiconductor chip is aligned with the uppermost first semiconductor chip; and
electrically coupling the second edge bonding pads and the second contact pads by means of second conductive wires.
8. The method according to claim 7 , wherein the first edge of the first semiconductor chip is opposite to the second edge of the second semiconductor chip, and the first semiconductor chips are attached in a stair form along a first direction and the second semiconductor chips are attached in a stair form along a second direction that is opposite to the first direction.
9. The method according to claim 7 , wherein the step of forming the first stacked package group further comprises: interposing first adhesive members between the stacked first semiconductor chips.
10. The method according to claim 9 , wherein the first adhesive member has a first thickness, the adhesive member disposed on the uppermost first semiconductor chip has a second thickness, and the second thickness is thicker than the first thickness.
11. The method according to claim 7 , wherein in the step of forming the second stacked package group further comprises: interposing second adhesive members between the second semiconductor chips.
12. The method according to claim 11 , wherein, the second adhesive member has a first thickness and the adhesive member formed on the uppermost first semiconductor chip has a second thickness, and the second thickness is thicker than the first thickness.
13. The method according to claim 7 , wherein the adhesive member is formed to cover a loop part of the first conductive wire.