Method of recovering and reproducing substrates and method of producing semiconductor wafers
A method of recovering a first substrate, including the steps of: sticking a second substrate on a semiconductor layer epitaxially grown on the first substrate; and separating the semiconductor layer and the first substrate. Furthermore, a method of reproducing a first substrate, including the step of surface processing the first substrate separated. Furthermore, a method of reproducing a first substrate, including the step of homoepitaxially growing the first substrate surface processed. Furthermore, a method of producing a semiconductor wafer, including the step of epitaxially growing a semiconductor layer on a first substrate. Thus a group III nitride or similar, expensive substrate can be used to efficiently and economically, epitaxially grow a group III nitride or similar semiconductor layer.
1. A method of reproducing a first substrate formed of a group III nitride, comprising the steps of:
epitaxially growing a first semiconductor layer on said first substrate;
sticking a second substrate on said first semiconductor layer epitaxially grown on said first substrate;
separating said first semiconductor layer and said first substrate by mechanical slicing such that a portion of said first substrate remains at a surface of said first semiconductor layer; and
surface-processing said first substrate separated from said first semiconductor layer after the step of separating; wherein
the step of surface-processing is performed by liquid-phase etching in which said first substrate is brought into contact with etchant of a liquid at least containing a liquid of Na.
2. A method of reproducing a first substrate formed of a group III nitride, comprising the steps of:
epitaxially growing a first semiconductor layer on said first substrate;
sticking a second substrate on said first semiconductor layer epitaxially grown on said first substrate;
separating said first semiconductor layer and said first substrate by mechanical slicing such that a portion of said first substrate remains at a surface of said first semiconductor layer;
surface-processing said first substrate separated from said first semiconductor layer after the step of separating; and
homoepitaxially growing a second semiconductor layer on said first substrate separated from said first semiconductor layer after the step of surface-processing; wherein
the step of surface-processing is performed by liquid-phase etching in which said first substrate is brought into contact with etchant of a liquid at least containing a liquid of Na.
3. A method of producing a semiconductor wafer, comprising the steps of:
epitaxially growing a first semiconductor layer on said first substrate;
sticking a second substrate on said first semiconductor layer epitaxially grown on a first substrate formed of a group III nitride;
separating said first semiconductor layer and said first substrate by mechanical slicing such that a portion of said first substrate remains at a surface of said first semiconductor layer;
surface-processing said first substrate separated from said first semiconductor layer after the step of separating; and
epitaxially growing a third semiconductor layer on said first substrate separated from said first semiconductor layer after the step of surface-processing; wherein
the step of surface-processing is performed by liquid-phase etching in which said first substrate is brought into contact with etchant of a liquid at least containing a liquid of Na.
4. A method of producing a semiconductor wafer, comprising the steps of:
epitaxially growing a first semiconductor layer on said first substrate;
sticking a second substrate on said first semiconductor layer epitaxially grown on a first substrate formed of a group III nitride;
separating said first semiconductor layer and said first substrate by mechanical slicing such that a portion of said first substrate remains at a surface of said first semiconductor layer;
surface-processing said first substrate separated from said first semiconductor layer after the step of separating;
homoepitaxially growing a second semiconductor layer on said first substrate separated from said first semiconductor layer after the step of surface-processing; and
epitaxially growing a fourth semiconductor layer on said first substrate separated from said first semiconductor layer after the step of homoepitaxially growing; wherein
the step of surface-processing is performed by liquid-phase etching in which said first substrate is brought into contact with etchant of a liquid at least containing a liquid of Na.