IP Library Granted Patent US 7,717,684
Granted Patent B2
US 7,717,684 · App. 10/921,197 · Granted May 18, 2010

Turbo vacuum pump and semiconductor manufacturing apparatus having the same

Assignee: Ebara Corporation
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Quick Facts
Patent No.
US 7,717,684
App. No.
10/921,197
Granted
May 18, 2010
Kind
B2
Abstract

A turbo vacuum pump is suitable for evacuating a corrosive process gas or evacuating a gas containing reaction products. The turbo vacuum pump includes a casing having an intake port, a pump section comprising rotor blades and stator blades housed in the casing, bearings for supporting the rotor blades, a motor for rotating the rotor blades; and a rotating shaft comprising a first rotating shaft to which the rotor blades are attached, and a second rotating shaft to which a motor rotor of the motor is attached.

Claims (34)

1. A turbo vacuum pump comprising:

a casing having an intake port;

a pump section comprising rotor blades and stator blades housed in said casing;

bearings for supporting said rotor blades;

a motor for rotating said rotor blades; and

a rotating shaft comprising a first rotating shaft to which said rotor blades are attached, a second rotating shaft to which a motor rotor of said motor is attached, and

a shaft fastening portion for coupling said first rotating shaft and said second rotating shaft;

wherein material of said first rotating shaft is different from material of said second rotating shaft; and

said rotor blade attached to said first rotating shaft comprises a centrifugal drag blade having a plurality of spiral vanes, and the surface of said centrifugal drag blades faces the surface of said stator blade so that a gas is compressed and evacuated from an inner diameter side toward an outer diameter side of said centrifugal drag blade by the interaction of said centrifugal drag blade with said stator blade.

2. A turbo vacuum pump according to claim 1 , wherein said first rotating shaft is composed of a material having at least one of high corrosion resistance and coefficient of linear expansion of 5×10 −6 ° C. −1 or less.

3. A turbo vacuum pump according to claim 1 , wherein said second rotating shaft is composed of a material having at least one of Young's modulus of 200 GPa or more and ferromagnetism.

4. A turbo vacuum pump according to claim 1 , further comprising a non-contact sealing mechanism for preventing an exhaust gas existing in said first rotating shaft side from entering said second rotating shaft side.

5. A turbo vacuum pump according to claim 1 , further comprising a purge gas port provided at said second rotating shaft for supplying an inert gas.

6. A turbo vacuum pump according to claim 1 , further comprising a heat insulating structure for providing heat drop between said first rotating shaft and said second rotating shaft.

7. A turbo vacuum pump according to claim 1 , wherein part or whole of said first rotating shaft to which said rotor blades are attached has a hollow shaft structure.

8. A semiconductor manufacturing apparatus comprising:

a turbo vacuum pump comprising:

a casing having an intake port;

a pump section comprising rotor blades and stator blades housed in said casing;

bearings for supporting said rotor blades;

a motor for rotating said rotor blades;

a rotating shaft comprising a first rotating shaft to which said rotor blades are attached, a second rotating shaft to which a motor rotor of said motor is attached, and a shaft fastening portion for coupling said first rotating shaft and said second rotating shaft;

a vacuum chamber, said turbo vacuum pump being disposed near said vacuum chamber;

an evacuation system comprising a backing pump; and

a piping connecting an exhaust port of said turbo vacuum pump to said backing pump,

wherein material of said first rotating shaft is different from material of said second rotating shaft, and

wherein said rotor blade attached to said first rotating shaft comprises a centrifugal drag blade having a plurality of spiral vanes, and the surface of said centrifugal drag blade faces the surface of said stator blade so that a gas is compressed and evacuated from an inner diameter side toward an outer diameter side of said centrifugal drag blade by the interaction of said centrifugal drag blade with said stator blade.

9. A semiconductor manufacturing apparatus according to claim 8 , wherein said first rotating shaft is composed of a material having at least one of high corrosion resistance and coefficient of linear expansion of 5×10 −6 ° C. −1 or less.

10. A semiconductor manufacturing apparatus according to claim 8 , wherein said second rotating shaft is composed of a material having at least one of Young's modulus of 200 GPa or more and ferromagnetism.

11. A semiconductor manufacturing apparatus according to claim 8 , further comprising a non-contact sealing mechanism for preventing an exhaust gas existing in said first rotating shaft side from entering said second rotating shaft side.

12. A semiconductor manufacturing apparatus according to claim 8 , further comprising a purge gas port provided at said second rotating shaft for supplying an inert gas.

13. A semiconductor manufacturing apparatus according to claim 8 , further comprising a heat insulating structure for providing heat drop between said first rotating shaft and said second rotating shaft.

14. A semiconductor manufacturing apparatus to claim 8 , wherein part or whole of said first rotating shaft to which said rotor blades are attached has a hollow shaft structure.

15. A semiconductor manufacturing apparatus according to claim 8 , wherein a pressure of said vacuum chamber is kept at a predetermined value by controlling a rotational speed of said turbo vacuum pump.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 19, 2004
From: SEKIGUCHI, SHINICHI; OGAMINO, HIROAKI; KAWASHIMA, HIROYASU
To: EBARA CORPORATION
Reel/Frame 015712/0833 →
Priority Claims (2)
JP 2003-297843 · Aug 21, 2003 · national
JP 2004-126048 · Apr 21, 2004 · national
Continuity (1)
Related Publication 20050042118A1 · Feb 24, 2005