Dry etching method, fine structure formation method, mold and mold fabrication method
A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.
1. A dry etching method comprising:
placing a substance including tungsten and carbon in a reaction chamber;
after placing the substrate, generating plasma from a mixed gas comprising a gas including fluorine, a gas including nitrogen and a gas consisting of at least one of C 2 H 4 , C 2 H 6 , C 4 H 8 and a saturated hydrocarbon molecule;
dry etching the substance by using the plasma; and
wherein said saturated hydrocarbon molecule has carbon-carbon single bond, and consists of hydrogen and carbon.
2. The dry etching method of claim 1 ,
wherein said gas including fluorine and said gas including nitrogen are replaced with a gas including fluorine and nitrogen.
3. The dry etching method of claim 1 ,
wherein said gas including fluorine includes a fluorine molecule, fluorocarbon, fluorohydrocarbon or a mixture of two or more thereof.
4. The dry etching method of claim 1 ,
wherein said gas including nitrogen includes a nitrogen molecule, an ammonia molecule or a mixture thereof.
5. The dry etching method of claim 1 ,
wherein said mixed gas further includes a hydrogen molecule or an ammonia molecule.
6. The dry etching method of claim 1 ,
wherein said mixed gas further includes a gas including oxygen.
7. The dry etching method of claim 1 ,
wherein said mixed gas further includes an inert gas.
8. The dry etching method of claim 1 ,
wherein said mixed gas further includes at least one of a gas including chlorine, a gas including bromine and a gas including iodine.
9. The dry etching method of claim 1 ,
wherein said substance including tungsten and carbon is an alloy including tungsten and carbon.
10. The dry etching method of claim 9 ,
wherein said alloy including tungsten and carbon further includes nitrogen.
11. The dry etching method of claim 1 ,
wherein said substance including tungsten and carbon is a tungsten-carbon alloy substrate or a substrate having a tungsten-carbon alloy in a surface portion thereof.
12. A fine structure formation method comprising:
forming a mask pattern on a substance including tungsten and carbon; and
with said mask pattern used as an etching mask, dry etching said substance by using plasma generated from a mixed gas comprising a gas including fluorine, a gas including nitrogen and a gas consisting of at least one of C 2 H 4 , C 2 H 6 , C 4 H 8 and a saturated hydrocarbon molecule
wherein said saturated hydrocarbon molecule has carbon-carbon single bond, and consists of hydrogen and carbon.
13. The fine structure formation method of claim 12 ,
wherein said gas including fluorine and said gas including nitrogen are replaced with a gas including fluorine and nitrogen.
14. The fine structure formation method of claim 12 ,
wherein said gas including fluorine includes a fluorine molecule, fluorocarbon, fluorohydrocarbon or a mixture of two or more thereof.
15. The fine structure formation method of claim 12 ,
wherein said gas including nitrogen includes a nitrogen molecule, an ammonia molecule or a mixture thereof.
16. The fine structure formation method of claim 12 ,
wherein said mixed gas further includes a hydrogen molecule or an ammonia molecule.
17. The fine structure formation method of claim 12 ,
wherein said mixed gas further includes a gas including oxygen.
18. The fine structure formation method of claim 12 ,
wherein said mixed gas further includes an inert gas.
19. The fine structure formation method of claim 12 ,
wherein said mixed gas further includes at least one of a gas including chlorine, a gas including bromine and a gas including iodine.
20. A mold fabrication method comprising:
placing a substance including tungsten and carbon in a reaction chamber;
after placing the substrate, generating plasma from a mixed gas comprising a gas including fluorine, a gas including nitrogen and a gas consisting of at least one of C 2 H 4 , C 2 H 6 , C 4 H 8 and a saturated hydrocarbon molecule;
dry etching the substance by using the plasma to process said substance into a mold; and
wherein said saturated hydrocarbon molecule has carbon-carbon single bond, and consists of hydrogen and carbon.
21. The mold fabrication method of claim 20 ,
wherein said gas including fluorine and said gas including nitrogen are replaced with a gas including fluorine and nitrogen.
22. The mold fabrication method of claim 20 ,
wherein said gas including fluorine includes a fluorine molecule, fluorocarbon, fluorohydrocarbon or a mixture of two or more thereof.
23. The mold fabrication method of claim 20 ,
wherein said gas including nitrogen includes a nitrogen molecule, an ammonia molecule or a mixture thereof.
24. The mold fabrication method of claim 20 ,
wherein said mixed gas further includes a hydrogen molecule or an ammonia molecule.
25. The mold fabrication method of claim 20 ,
wherein said mixed gas further includes a gas including oxygen.
26. The mold fabrication method of claim 20 ,
wherein said mixed gas further includes an inert gas.
27. The mold fabrication method of claim 20 ,
wherein said mixed gas further includes at least one of a gas including chlorine, a gas including bromine and a gas including iodine.