Plasma-enhanced cyclic layer deposition process for barrier layers
In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.
1. A method for depositing materials on a substrate, comprising:
depositing a titanium layer on a substrate;
depositing a conformal titanium nitride layer comprising a plurality of titanium nitride layers over the titanium layer by a cyclical deposition process, wherein the cyclical deposition process comprises:
exposing the substrate to a deposition gas comprising a titanium precursor to form a titanium-containing layer on the substrate, wherein the titanium precursor comprises a titanium organic compound comprising methylamido or ethylamido;
exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a nitrogen precursor gas comprising a mixture of nitrogen gas and hydrogen gas; and
sequentially exposing the substrate to the deposition gas and the nitrogen plasma to form the conformal titanium nitride layer; and
depositing a conductive material comprising tungsten or copper over the substrate during a vapor deposition process.
2. The method of claim 1 , wherein the titanium layer is formed during a chemical vapor deposition process.
3. The method of claim 1 , wherein the titanium layer is formed by a cyclical deposition process.
4. The method of claim 1 , wherein the titanium organic compound comprises tetrakis(dimethylamido) titanium, tetrakis(diethylamido) titanium, or derivatives thereof.
5. The method of claim 1 , wherein the deposition gas further comprises a nitrogen carrier gas.
6. The method of claim 5 , wherein the conductive material comprises copper.
7. The method of claim 5 , wherein the conductive material comprises tungsten.
8. A method for depositing materials on a substrate, comprising:
forming a conformal titanium nitride layer comprising a plurality of titanium nitride layers on a substrate during a cyclical deposition process by sequentially exposing the substrate to a deposition gas comprising a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas; and
depositing a conductive material comprising tungsten or copper over the conformal titanium nitride layer during a vapor deposition process.
9. The method of claim 8 , wherein the titanium organic compound comprises methylamido or ethylamido.
10. The method of claim 9 , wherein the titanium organic compound comprises tetrakis(dimethylamido) titanium, tetrakis(diethylamido) titanium, or derivatives thereof.
11. The method of claim 8 , wherein the deposition gas further comprises a nitrogen carrier gas.
12. The method of claim 11 , wherein the conductive material comprises copper.
13. The method of claim 11 , wherein the conductive material comprises tungsten.
14. A method for depositing materials on a substrate, comprising:
depositing a titanium layer on a substrate;
depositing a conformal titanium nitride layer comprising a plurality of titanium nitride layers over the titanium layer by a cyclical deposition process, wherein the cyclical deposition process comprises:
exposing the substrate to a deposition gas comprising a titanium organic compound to form a titanium-containing layer on the substrate;
exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a nitrogen precursor gas comprising a mixture of nitrogen gas and hydrogen gas; and
sequentially exposing the substrate to the deposition gas and the nitrogen plasma to form the conformal titanium nitride layer; and
depositing a conductive material comprising tungsten or copper over the substrate during a vapor deposition process.
15. The method of claim 14 , wherein the titanium layer is formed during a chemical vapor deposition process.
16. The method of claim 14 , wherein the titanium layer is formed by a cyclical deposition process.
17. The method of claim 14 , wherein the titanium organic compound comprises methylamido or ethylamido.
18. The method of claim 17 , wherein the titanium organic compound comprises tetrakis(dimethylamido) titanium, tetrakis(diethylamido) titanium, or derivatives thereof.
19. The method of claim 14 , wherein the deposition gas further comprises a nitrogen carrier gas and the conductive material comprises copper.
20. The method of claim 14 , wherein the deposition gas further comprises a nitrogen carrier gas and the conductive material comprises tungsten.