Phase change memory device

1. A phase change memory device, comprising:

a substrate;

a first electrode layer formed on the substrate;

a first phase change memory structure formed on the first electrode layer and electrically connected to the first electrode layer;

a second phase change memory structure formed on the first phase change memory structure and electrically connected to the first phase change memory structure, wherein the first phase change memory structure or the second phase change memory structure comprises:

a cup-shaped heating electrode disposed in a first dielectric layer;

a first insulating layer disposed on the first dielectric layer along a first direction parallel to a side of the cup-shaped heating electrode and covering a portion of the cup-shaped heating electrode;

a second dielectric layer disposed on the first insulating layer and the first dielectric layer; and

a first electrode structure disposed in the second dielectric layer along a second direction parallel to another side of the cup-shaped heating electrode and covers a portion of the first insulating layer and the cup-shaped heating electrode, wherein the first electrode structure comprises a pair of phase change material spacers disposed on a pair of sidewalls of the first electrode structure and covering a portion of the cup-shaped heating electrode, thereby forming an intersectional contact area between one of the phase change material spacers and the cup-shaped heating electrode.

2. The phase change memory device as claimed in claim 1 , the cup-shaped heating electrode further comprising:

a diode structure;

a conductive layer disposed on the diode, wherein the conductive layer is cup-shaped and comprises an opening; and

an insulating layer filled in the opening.

3. The phase change memory device as claimed in claim 2 , wherein the conductive layer has a thickness of about 1 nm to 300 nm.

4. The phase change memory device as claimed in claim 2 , wherein the conductive layer comprises metals, alloys, metal compounds, semiconductor materials or combinations thereof.

5. The phase change memory device as claimed in claim 4 , wherein the metals comprise aluminum (Al), copper (Cu), cobalt (Co), tantalum (Ta), nickel (Ni), titanium (Ti) or tungsten (W).

6. The phase change memory device as claimed in claim 4 , wherein the alloys comprise aluminum-alloy, copper-alloy, cobalt-alloy, tantalum-alloy, nickel-alloy, titanium-alloy, tungsten-alloy, TiW, GaSb, GeTe, Ge 2 Sb 2 Te 5 , Ag—In—Sb—Te or combinations thereof.

7. The phase change memory device as claimed in claim 4 , wherein the metal compounds comprise CoN, TaN, NiN, TiN, WN, CoSi X N Y , TaSi X N Y , NiSi X N Y , TiSi X N Y , WSi X N Y , Co-salicide (CoSi X ), Ta-salicide (TaSi X ), Ni-salicide (NiSi X ), Ti-salicide (TiSi X ), W-salicide (WSi X ), yttrium barium copper oxide (YBCO), Cu 2 O, indium tin oxide (ITO) or combinations thereof.

8. The phase change memory device as claimed in claim 4 , wherein the semiconductor material comprises polycrystalline semiconductor material, amorphous semiconductor material or combinations thereof.

9. The phase change memory device as claimed in claim 1 , wherein the first insulating layer directly covers half the cup-shaped heating electrode from the top view.

10. The phase change memory device as claimed in claim 1 , wherein the first electrode structure directly covers one quarter of the cup-shaped heating electrode from the top view.

11. The phase change memory device as claimed in claim 1 , wherein the first electrode structure is a composite layer comprising an insulating layer and a conductive layer.

12. The phase change memory device as claimed in claim 11 , wherein the conductive layer comprises metals, alloys, metal compounds, semiconductor materials or combinations thereof.

13. The phase change memory device as claimed in claim 12 , wherein the metals comprise aluminum (Al), copper (Cu), cobalt (Co), tantalum (Ta), nickel (Ni), titanium (Ti) or tungsten (W).

14. The phase change memory device as claimed in claim 12 , wherein the alloys comprise aluminum-alloy, copper-alloy, cobalt-alloy, tantalum-alloy, nickel-alloy, titanium-alloy, tungsten-alloy, TiW, GaSb, GeTe, Ge 2 Sb 2 Te 5 , Ag—In—Sb—Te alloy or combinations thereof.

15. The phase change memory device as claimed in claim 12 , wherein the metal compounds comprise CoN, TaN, NiN, TiN, WN, CoSi X N Y , TaSi X N Y , NiSi X N Y , TiSi X N Y , WSi X N Y , Co-salicide (CoSi X ), Ta-salicide (TaSi X ), Ni-salicide (NiSix), Ti-salicide (TiSix), W-salicide (WSi X ), yttrium barium copper oxide (YBCO), Cu 2 O, indium tin oxide (ITO) or combinations thereof.

16. The phase change memory device as claimed in claim 12 , wherein the semiconductor material comprises polycrystalline semiconductor material, amorphous semiconductor material or combinations thereof.

17. The phase change memory device as claimed in claim 12 , wherein the conductive layer comprises single layer or stacked layers.

18. The phase change memory device as claimed in claim 1 , wherein the first direction is perpendicular to the second direction.

19. The phase change memory device as claimed in claim 1 , wherein the phase change material spacers of the first phase change memory structure are perpendicular to the phase change material spacers of the second phase change memory structure.

20. The phase change memory device as claimed in claim 1 , wherein a height of the phase change material spacer is less than a height of the first electrode structure.