Grounding front-end-of-line structures on a SOI substrate
View Patent ↗Structures and a method are disclosed for grounding gate-stack and/or silicon active region front-end-of-line structures on a silicon-on-insulator (SOI) substrate, which may be used as test structures for VC inspection. In one embodiment, a structure includes a grounded bulk silicon substrate having the SOI substrate thereover, the SOI substrate including a silicon-on-insulator (SOI) layer and a buried oxide (BOX) layer; the silicon active region having at least one finger element within the SOI layer, the at least one finger element isolated by a shallow trench isolation (STI) layer; and a polysilicon ground intersecting the at least one finger element and extending through the STI layer and the BOX layer to the grounded bulk silicon substrate, the polysilicon ground contacting the silicon active region and the grounded bulk silicon substrate.
1. A structure comprising:
a grounded bulk silicon substrate having a silicon-on-insulator (SOI) substrate thereover, the SOI substrate including a silicon-on-insulator (SOI) layer and a buried oxide (BOX) layer;
a silicon active region having at least one finger element within the SOI layer, the at least one finger element isolated by a shallow trench isolation (STI) layer; and
a polysilicon ground intersecting the at least one finger element and extending through the STI layer and the BOX layer to the grounded bulk silicon substrate, the polysilicon ground contacting the silicon active region and the grounded bulk silicon substrate.
2. The structure of claim 1 , wherein the at least one finger element includes a plurality of finger elements, each finger element separated from an adjacent finger element by a portion of the STI layer.
3. The structure of claim 1 , wherein the silicon active region is a part of a voltage contrast test structure.
4. The structure of claim 1 , wherein the silicon active region is part of a product chip and is positioned for charge dissipation.
5. The structure of claim 1 , wherein the polysilicon ground includes a polysilicon filled trench.
6. The structure of claim 1 , further comprising a barrier layer over the SOI layer, the polysilicon ground extending through the barrier layer.
7. The structure of claim 1 , wherein the polysilicon ground contacts a sidewall of the silicon active region.
8. The structure of claim 1 , wherein the polysilicon ground replaces a part of the STI layer between the plurality of finger elements.
9. A method of grounding a silicon active region within a silicon-on-insulator (SOI) substrate prior to contact dielectric formation, the method comprising the steps of:
providing the SOI substrate including a silicon-on-insulator (SOI) layer and a buried oxide (BOX) layer, the SOI substrate positioned over a grounded bulk silicon substrate;
forming the silicon active region having at least one finger element within the SOI layer, the at least one finger element isolated by a shallow trench isolation (STI) layer; and
forming a polysilicon ground intersecting the at least one finger element and extending through the STI layer and the BOX layer to the grounded bulk silicon substrate, the polysilicon ground contacting the silicon active region and the grounded bulk silicon substrate.
10. The method of claim 9 , wherein the at least one finger element includes a plurality of finger elements, each finger element separated from an adjacent finger element by a portion of the STI layer.
11. The method of claim 9 , wherein the polysilicon ground forming step includes:
forming a mask having an opening substantially orthogonal to the at least one finger element and the STI layer therebetween;
removing a portion of the STI layer adjacent to the at least one finger element through the BOX layer to the grounded bulk silicon substrate to form a ground opening;
depositing a polysilicon in the ground opening; and
planarizing the polysilicon.
12. The method of claim 11 , wherein the providing step further includes providing a barrier layer of the SOI substrate, and the removing step includes etching through the barrier layer.
13. The method of claim 9 , wherein the polysilicon ground contacts a sidewall of the silicon active region.
14. The method of claim 9 , wherein the silicon active region is a part of a voltage contrast test structure.
15. The method of claim 9 , wherein the silicon active region is part of a product chip and is positioned for charge dissipation.
16. A structure for grounding a gate stack through a silicon-on-insulator (SOI) substrate, the structure comprising:
a bulk silicon substrate having the SOI substrate thereover, the SOI substrate including a silicon-on-insulator (SOI) layer on top of a buried oxide (BOX) layer;
a polysilicon ground extending through the SOI layer and the BOX layer to the bulk silicon substrate; and
a gate oxide layer of the gate stack on an upper surface of the polysilicon ground, the gate oxide layer being insufficiently insulative to prevent electrical conductivity therethrough,
wherein the gate stack contacts the polysilicon oxide layer.
17. The structure of claim 16 , wherein the upper surface of the polysilicon ground is uneven so as to make the polysilicon oxide layer insufficiently insulative to prevent electrical conductivity therethrough.
18. The structure of claim 16 , wherein the gate stack is a part of a voltage contrast test structure.
19. The structure of claim 16 , wherein the gate stack is part of a product chip and is positioned for charge dissipation.
20. The structure of claim 16 , wherein the structure is present prior to formation of the gate stack.