Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode

1. A plasma reactor comprising:

a chamber and a workpiece support pedestal in the chamber, the workpiece support pedestal comprising at least one electrode;

an RF bias power generator having a first shut-off control input; an impedance matching circuit coupled to said at least one electrode; a first RF power conductor connected between said RF bias power generator and said impedance matching circuit;

a first RF current sensor comprising:

(a) a first ring conductor wrapped around a portion of said first RF power conductor;

(b) a first inductive winding having a pair of ends and wrapped around a portion of said first ring conductor;

a first arc detection comparator circuit having a first comparison threshold and having a first comparator output and having a first comparator input coupled to said first inductive winding;

a process controller coupled to the first comparator output of said first arc detection comparator circuit and having a first process controller output coupled to said first shut-off control input of said RF bias power generator;

a plasma RF power applicator capable of coupling RF power into said chamber;

an RF source power generator having a second shut-off control input; a second impedance matching circuit coupled to said plasma RF power applicator; and a second RF power conductor connected between said RF source power generator and said second impedance matching circuit;

a second RF current sensor comprising:

(a) a second ring conductor wrapped around a portion of said second RF power conductor; and

(b) a second inductive winding having a pair of ends and wrapped around a portion of said second ring conductor; and

a second arc detection comparator circuit having a second comparison threshold, and having a second comparator input coupled to said second inductive winding.

2. The reactor of claim 1 further comprising a signal conditioner connected between said one end of said first inductive winding and said first comparator input of said first arc detection comparator, said signal conditioner comprising:

a peak detection circuit comprising a series rectifier diode and a capacitor.

3. The reactor of claim 2 wherein said signal conditioner further comprises:

an RF filter circuit comprising a series inductor and a shunt capacitance coupled in series with said peak detection circuit.

4. The reactor of claim 3 wherein said signal conditioner further comprises:

a scaling circuit comprising a resistor network having a voltage divider ratio and coupled in series with said RF filter circuit.

5. The reactor of claim 4 wherein said signal conditioner further comprises:

an amplifier having an amplifier gain and coupled in series with said scaling circuit.

6. The reactor of claim 5 wherein said first comparison threshold corresponds to a current induced in said first RF current sensor by an electric arc in said chamber.

7. The reactor of claim 6 wherein said divider ratio and said amplifier gain provide a predetermined signal dynamic range exceeding a signal level corresponding to an electric arc in said chamber.

8. The reactor of claim 1 wherein said second arc detection comparator circuit comprises a second comparator output, and wherein said process controller is coupled to said second comparator output of said second arc detection comparator circuit, said process controller further comprising a second process controller output coupled to said second shutoff control input.

9. The reactor of claim 8 wherein said process controller is programmed to shut off said RF bias power generator and said RF source power generator in response to an arc-indicative signal received from any of said first and second arc detection comparator circuits.

10. The reactor of claim 1 wherein said pedestal comprises an electrostatic chuck and said at least one electrode comprises an electrostatic chucking electrode, said reactor further comprising a D.C. chucking voltage supply coupled to said electrostatic chucking electrode.

11. The reactor of claim 1 wherein said pedestal comprises a bipolar electrostatic chuck and said at least one electrode comprises a first electrostatic chucking electrode, said pedestal further comprising a second electrostatic chucking electrode, said reactor further comprising first and second chucking voltage supplies coupled to said first and second electrostatic chucking electrodes, respectively.

12. A plasma reactor comprising:

a chamber and a workpiece support pedestal in the chamber, the workpiece support pedestal comprising at least one electrode;

an RF bias power generator having a first shut-off control input; an impedance matching circuit coupled to said at least one electrode; a first RF power conductor connected between said RF bias power generator and said impedance matching circuit;

a first RF voltage sensor comprising:

(a) a first probe conductor connected to said first RF power conductor;

(b) a first attenuation resistor network connected to said first probe conductor;

a first arc detection comparator circuit having a first comparison threshold and having a first comparator output and having a first comparator input coupled to said attenuation resistor network;

a process controller coupled to the first comparator output of said first arc detection comparator circuit and having a first process controller output coupled to said shut-off control input of said RF bias power generator;

a plasma RF power applicator capable of coupling RF power into said chamber;

an RF source power generator having a second shut-off control input; a second impedance matching circuit coupled to said plasma RF power applicator; and a second RF power conductor connected between said RF source power generator and said second impedance matching circuit;

a second RF voltage sensor comprising:

(a) a second probe conductor connected to said second RF power conductor;

(b) a second high impedance attenuation resistor network connected to said second probe conductor;

a second arc detection comparator circuit having a second comparison threshold and coupled to said second high impedance attenuation resistor network.

13. The reactor of claim 12 further comprising a signal conditioner connected between said first attenuation resistor network and said first comparator input of said first arc detection comparator, said signal conditioner comprising:

a peak detection circuit comprising a series rectifier diode and a capacitor.

14. The reactor of claim 13 wherein said signal conditioner further comprises:

an RF filter circuit comprising a series inductor and a shunt capacitance coupled in series with said peak detection circuit.

15. The reactor of claim 14 wherein said signal conditioner further comprises:

a scaling circuit comprising a resistor network having a voltage divider ratio and coupled in series with said RF filter circuit.

16. The reactor of claim 15 wherein said signal conditioner further comprises:

an amplifier having an amplifier gain and coupled in series with said scaling circuit.

17. The reactor of claim 16 wherein said first comparison threshold corresponds to a voltage induced in said first RF voltage sensor by an electric arc in said chamber.

18. The reactor of claim 17 wherein said divider ratio and said amplifier gain provide a predetermined signal dynamic range exceeding a signal level corresponding to an electric arc in said chamber.

19. The reactor of claim 12 wherein said second arc detection comparator circuit comprises a second comparator output, and wherein said process controller is coupled to said second comparator output of said second arc detection comparator circuit, said process controller further comprising a second process controller output coupled to said second shutoff control input.

20. The reactor of claim 19 wherein said process controller is programmed to shut off said RF bias power generator and said RF source power generator in response to an arc-indicative signal received from any of said first and second arc detection comparator circuits.