Advanced multilayer dielectric cap with improved mechanical and electrical properties
A dielectric cap, interconnect structure containing the same and related methods are disclosed. The inventive dielectric cap includes a multilayered dielectric material stack wherein at least one layer of the stack has good oxidation resistance, Cu diffusion and/or substantially higher mechanical stability during a post-deposition curing treatment, and including Si—N bonds at the interface of a conductive material such as, for example, Cu. The dielectric cap exhibits a high compressive stress and high modulus and is still remain compressive stress under post-deposition curing treatments for, for example: copper low k back-end-of-line (BEOL) nanoelectronic devices, leading to less film and device cracking and improved reliability.
1. An interconnect structure comprising:
at least one interlevel or intralevel dielectric material having an embedded conductive material located therein, said embedded conductive material having an upper surface that is substantially coplanar with an upper surface of said at least one interlevel or intralevel dielectric material; and
a dielectric cap located on at least said upper surface of said embedded conductive material, said dielectric cap comprising a multilayered dielectric material stack having an effective dielectric constant of equal to, or less than, 4.5 and a compressive stress of equal to, or greater than, 100 MPa which remains compressive even after post-deposition curing, wherein at least one layer of said multilayered dielectric stack includes Si—N bonding near the interface of the embedded conductive material.
2. The interconnect structure of claim 1 wherein the dielectric cap is a cured material.
3. The interconnect structure of claim 2 wherein the Si—N bonding within the dielectric cap is of a sufficient content to provide a layer having an optical band gap on the order of about 3.0 eV which substantially blocks UV radiation during a post deposition UV curing process.
4. The interconnect structure of claim 2 wherein said multilayered dielectric material stack further comprises an overlayer which includes atoms of at least Si and C, wherein said C atoms are present in an amount of about 15 atomic % or greater to provide improved etch selective to the interlevel or intralevel dielectric material.
5. The interconnect structure of claim 2 wherein said multilayered dielectric material stack further comprises an oxygen diffusion barrier overlayer, said oxygen diffusion barrier overlayer having a bonding matrix selected from the group consisting of Si—N—O, N—Si—C—O and O—Si—N—C.
6. The interconnect structure of claim 2 wherein the embedded conductive material comprises Cu, a Cu alloy, Al or an Al alloy.
7. A method of forming an interconnect structure comprising:
providing a structure including at least one interlevel or intralevel dielectric material having an embedded conductive material located therein, said embedded conductive material having an upper surface that is substantially coplanar with an upper surface of said at least one interlevel or intralevel dielectric material; and
forming dielectric cap located on at least said upper surface of said embedded conductive material, said dielectric cap comprising a multilayered dielectric material stack having an effective dielectric constant of equal to, or less than, 4.5 and a compressive stress of equal to, or greater than, 100 MPa which remains compressive even after post deposition curing, wherein at least one layer of said multilayered dielectric stack includes Si—N bonding at the interface of the embedded conductive material.
8. The method of claim 7 wherein said forming of the dielectric cap includes introducing at least a silicon-based precursor and a nitrogen-containing precursor into a reactor chamber including said structure and depositing said dielectric cap on at least the upper surface of said embedded conductive material from said silicon-based precursor and said nitrogen-containing precursor.
9. The method of claim 8 further comprising a post-deposition curing step selected from heat, UV exposure, E-beam exposure and combinations thereof.
10. The method of claim 8 wherein said silicon-based precursor is selected from the group consisting of: a carbosilane, a silane, a disilane, a nitrogen containing silicon precursor comprising atoms of silicon (Si), nitrogen (N) and hydrogen (H), and carbo aminosilane.