Embedded semiconductor device including planarization resistance patterns and method of manufacturing the same
An embedded semiconductor device which a logic region and the memory region are planarized with planarization resistance patterns and a method of manufacturing the same are disclosed. The embedded semiconductor device includes a substrate, gates formed on the substrate, source/drain regions formed on both sides of the gates in the substrate, a first interlayer dielectric (ILD) layer which covers the gates and the source/drain regions, first via plugs which vertically penetrate the first ILD layer and are selectively connected to the source/drain regions, capacitors and second via plugs selectively connected to the first via plugs, a second ILD layer that fills the space between the capacitors and the second via plugs, planarization resistance patterns formed on the second ILD layer, a third ILD layer formed on the second ILD layer and the planarization resistant patterns, and third via plugs which vertically penetrate the third ILD layer, and are selectively connected to a top electrode of the capacitors and the second via plugs.
1. A merged memory with logic (MML) semiconductor device comprising:
a substrate;
gates formed on the substrate;
a source region and a drain region formed on respective sides of each of the gates in the substrate;
a first interlayer dielectric (ILD) layer which covers the gates and the source/drain regions;
first via plugs which vertically penetrate the first ILD layer and selectively connect to the source/drain regions;
capacitors and second via plugs selectively connected to the first via plugs;
a second ILD layer fills between the capacitors and the second via plugs;
planarization resistance patterns formed on the second ILD layer, wherein the planarization resistance patterns include an upper resistance pattern formed of a material used as a top electrode of the capacitors, and wherein the planarization resistance patterns include a lower resistance pattern formed of a material used as a dielectric layer of the capacitors, the upper resistance pattern and the lower resistance pattern being separated by a capacitor dielectric layer;
a third ILD layer formed on the second ILD layer and the planarization resistant patterns; and
third via plugs which vertically penetrate the third ILD layer, and selectively connected to the top electrode of the capacitors and the second via plugs.
2. The MML semiconductor device of claim 1 , wherein the capacitors each comprise a bottom electrode, a dielectric layer, and the top electrode;
the bottom electrode has the same height as the second ILD layer; and
the dielectric layer and the top electrode are extended on the second ILD layer.
3. The MML semiconductor device of claim 2 , wherein the substrate includes a memory region and a logic region, wherein
the capacitors are formed in the memory region, and
the planarization resistance patterns are formed in the logic region.
4. The MML semiconductor device of claim 1 , further comprising a capping layer of the planarization resistance pattern formed on the upper resistance pattern.
5. The MML semiconductor device of claim 4 , wherein the capping layer of the planarization resistance pattern is extended on the second ILD layer.
6. The MML semiconductor device of claim 1 , wherein the third via plugs are separated from the planarization resistance patterns by a distance about equal to a horizontal width of the third via plugs.
7. The MML semiconductor device of claim 1 , further comprising a capacitor capping layer formed on the top electrode of the capacitors.