Pattern data correction method, pattern checking method, pattern check program, photo mask producing method, and semiconductor device manufacturing method

1. A pattern data correction method comprising:

preparing by computer design pattern data including integrated circuit pattern data;

setting a tolerance to a transferred pattern of the design pattern that is within an allowable error range when the design pattern is transferred on a wafer;

setting a target pattern within the tolerance to the transferred pattern, wherein setting the target pattern includes:

setting a margin of an exposure dose;

obtaining a midpoint of the exposure dose at which a predetermined focus margin is ensured within the exposure dose margin; and

obtaining an edge position of a pattern on the substrate in an exposure dose at the midpoint; and

making a correction for the target pattern corresponding to the design pattern to make a first correction pattern under a predetermined condition.

2. A pattern data correction method according to claim 1 , wherein setting the target pattern includes:

obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values;

obtaining a smaller exposure dose value of the exposure doses which correspond to the lower limits in the two focus values;

obtaining a larger exposure dose value of the exposure doses which correspond to the upper limits in the two focus values;

setting an exposure dose included within a range of the two obtained exposure doses; and

obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.

3. A pattern data correction method according to claim 1 , wherein setting the target pattern includes:

obtaining an exposure dose which corresponds to a lower limit and an exposure dose which corresponds to an upper limit in the tolerance in each of two focus values;

obtaining a larger exposure dose value of the exposure doses which correspond to the lower limits in the two focus values;

obtaining a smaller exposure dose value of the exposure doses which correspond to the upper limits in the two focus values;

setting an exposure dose included within a range of the two obtained exposure doses; and

obtaining an edge position of a pattern on the substrate which is formed in the set exposure dose.

4. A pattern data correction method according to claim 1 , wherein making the first correction pattern includes selecting a correction according to a length of a side of the target pattern.

5. A pattern data correction method according to claim 1 , wherein the predetermined condition is a condition which is used when forming a pattern on the substrate.

6. A photo mask producing method for creating a photo mask with a pattern data produced by using the pattern data correction method according to claim 1 .

7. A semiconductor device manufacturing method for manufacturing a semiconductor device with a photo mask produced by using the photo mask creating method according to claim 6 .