Method of joining a plurality of SOI substrates on a glass substrate by a heat treatment
View Patent ↗After the plurality of single-crystal semiconductor layers are provided adjacent to each other with a certain distance over a glass substrate which is a support substrate, heat treatment is performed on the glass substrate. The support substrate shrinks by this heat treatment, and the adjacent single-crystal semiconductor layers are in contact with each other due to the shrink. Energy beam irradiation is performed with the plurality of single-crystal semiconductor layers being in contact with each other, the plurality of single-crystal semiconductor layers are integrated, and thus a continuous single-crystal semiconductor layer is formed.
1. A method for manufacturing an SOI substrate comprising:
performing heat treatment in an oxidizing atmosphere containing halogen to form an oxide film on each surface of a first semiconductor substrate and a second semiconductor substrate;
performing irradiation with ions including one or a plurality of atoms, which are different in mass, from each one surface side of the first semiconductor substrate and the second semiconductor substrate to form a separation layer having a porous structure in each region, a depth of which is close to an average depth at which the ions reach from the each surface of the first semiconductor substrate and the second semiconductor substrate;
forming a blocking layer formed of a silicon nitride film or a silicon nitride oxide film over the oxide film on the each surface of the first semiconductor substrate and the second semiconductor substrate;
forming a silicon oxide film over the blocking layer of each of the first semiconductor substrate and the second semiconductor substrate;
generating a crack in the separation layer, performing a first heat treatment for separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, and forming a first single-crystal semiconductor layer from the first semiconductor substrate and a second single-crystal semiconductor layer from the second semiconductor substrate with a certain distance over a glass substrate, in a state where the each surface of the first semiconductor substrate and the second semiconductor substrate are overlapped with the glass substrate to overlap with the silicon oxide film interposed therebetween;
performing a second heat treatment on the glass substrate at a temperature of greater than or equal to a strain point of the glass substrate to shrink the glass substrate after separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, wherein the first single-crystal semiconductor layer and the second single-crystal semiconductor layer are in contact with each other by performing the second heat treatment; and
after performing the second heat treatment, irradiating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer with laser light, thereby integrating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer to form a third single-crystal semiconductor layer comprising the first single-crystal semiconductor layer and the second single-crystal semiconductor layer.
2. The method for manufacturing an SOI substrate according to claim 1 , wherein the ions including the one or the plurality of atoms, which are different in mass, are hydrogen ions which are different in mass.
3. The method for manufacturing an SOI substrate according to claim 2 , wherein the hydrogen ions, which are different in mass, are H + , H 2 + , and H 3 + ions.
4. The method for manufacturing an SOI substrate according to claim 3 , wherein, among the hydrogen ions, a proportion of H 3 + ion is higher than proportions of other ion species.
5. The method for manufacturing an SOI substrate according to claim 1 , wherein the halogen is obtained from one or plural kinds of gases selected from among HF, NF 3 , HBr, Cl 2 , ClF 3 , BCl 3 , F 2 , and Br 2 .
6. The method for manufacturing an SOI substrate according to claim 1 , wherein the first heat treatment for generating the crack is performed at a temperature lower than a temperature of the second heat treatment of which is higher than the strain point of the glass substrate.
7. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed according to claim 1 .
8. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed accord to claim 1 , and
forming a display element which is electrically connected to the semiconductor element.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein a liquid crystal display element is formed as the display element.
10. The method for manufacturing a semiconductor device according to claim 8 , wherein a light-emitting element is formed as the display element.
11. A method for manufacturing an SOI substrate comprising:
performing heat treatment in an oxidizing atmosphere containing halogen to form an oxide film on each surface of a first semiconductor substrate and a second semiconductor substrate;
performing irradiation with ions including one or a plurality of atoms, which are different in mass, from each one surface side of the first semiconductor substrate and the second semiconductor substrate to form a separation layer having a porous structure in each region, a depth of which is close to an average depth at which the ions reach from the each surface of the first semiconductor substrate and the second semiconductor substrate;
forming a blocking layer formed of a silicon nitride film or a silicon nitride oxide film over the oxide film on the each surface of the first semiconductor substrate and the second semiconductor substrate;
forming a silicon oxide film over the blocking layer of each of the first semiconductor substrate and the second semiconductor substrate;
generating a crack in the separation layer, performing a first heat treatment for separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, and forming a first single-crystal semiconductor layer from the first semiconductor substrate and a second single-crystal semiconductor layer from the second semiconductor substrate with a certain distance over a glass substrate, in a state where the each surface of the first semiconductor substrate and the second semiconductor substrate are overlapped with the glass substrate to overlap with the silicon oxide film interposed therebetween;
performing a second heat treatment on the glass substrate at a temperature of greater than or equal to a strain point of the glass substrate to shrink the glass substrate after separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, wherein the first single-crystal semiconductor layer and the second single-crystal semiconductor layer are in contact with each other by performing the second heat treatment; and
after performing the second heat treatment, irradiating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer with laser light, thereby bonding the first single-crystal semiconductor layer with the second single-crystal semiconductor layer and integrating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer to form a third single-crystal semiconductor layer comprising the first single-crystal semiconductor layer and the second single-crystal semiconductor layer.
12. The method for manufacturing an SOI substrate according to claim 11 , wherein the ions including the one or the plurality of atoms, which are different in mass, are hydrogen ions which are different in mass.
13. The method for manufacturing an SOI substrate according to claim 12 , wherein the hydrogen ions, which are different in mass, are H + , H 2 + , and H 3 + ions.
14. The method for manufacturing an SOI substrate according to claim 13 , wherein, among the hydrogen ions, a proportion of H 3 + ion is higher than proportions of other ion species.
15. The method for manufacturing an SOI substrate according to claim 11 , wherein the halogen is obtained from one or plural kinds of gases selected from among HF, NF 3 , HBr, Cl 2 , ClF 3 , BCI 3 , F 2 , and Br 2 .
16. The method for manufacturing an SOI substrate according to claim 11 , wherein the first heat treatment for generating the crack is performed at a temperature lower than a temperature of the second heat treatment of which is higher than the strain point of the glass substrate.
17. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed according to claim 11 .
18. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed accord to claim 11 , and
forming a display element which is electrically connected to the semiconductor element.
19. The method for manufacturing a semiconductor device according to claim 18 , wherein a liquid crystal display element is formed as the display element.
20. The method for manufacturing a semiconductor device according to claim 18 , wherein a light-emitting element is formed as the display element.
21. A method for manufacturing an SOI substrate comprising:
performing irradiation with ion from a surface of each of a first semiconductor substrate and a second semiconductor substrate and forming a separation layer in each of the first semiconductor substrate and the second semiconductor substrate;
forming an oxide film on each surface of the first semiconductor substrate and the second semiconductor substrate;
disposing the first semiconductor substrate and the second semiconductor substrate on a glass substrate with the oxide film interposed therebetween;
performing a first heat treatment for separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer to form a first single-crystal semiconductor layer from the first semiconductor substrate and a second single-crystal semiconductor layer from the second semiconductor substrate with a certain distance over the glass substrate;
performing a second heat treatment on the glass substrate at a temperature of greater than or equal to a strain point of the glass substrate to shrink the glass substrate after separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, wherein the first single-crystal semiconductor layer and the second single-crystal semiconductor layer are in contact with each other by performing the second heat treatment; and
after performing the second heat treatment, irradiating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer with laser light, thereby integrating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer to form a third single-crystal semiconductor layer comprising the first single-crystal semiconductor layer and the second single-crystal semiconductor layer.
22. The method for manufacturing an SOI substrate according to claim 21 , wherein the ion includes one or a plurality of atoms which is different in mass thereof.
23. The method for manufacturing an SOI substrate according to claim 22 , wherein the ion includes hydrogen ions which are different in mass.
24. The method for manufacturing an SOI substrate according to claim 23 , wherein the hydrogen ions which are different in mass are H + , H 2 + , and H 3 + ions.
25. The method for manufacturing an SOI substrate according to claim 24 , wherein, among the hydrogen ions, a proportion of H 3 + ion is higher than proportions of other ion species.
26. The method for manufacturing an SOI substrate according to claim 21 , wherein the first heat treatment for generating a crack is performed at a temperature lower than a temperature of the second heat treatment of which is higher than the strain point of the glass substrate.
27. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed according to claim 21 .
28. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed accord to claim 21 , and forming a display element which is electrically connected to the semiconductor element.
29. The method for manufacturing a semiconductor device according to claim 28 , wherein a liquid crystal display element is formed as the display element.
30. The method for manufacturing a semiconductor device according to claim 28 , wherein a light-emitting element is formed as the display element.
31. A method for manufacturing an SOI substrate comprising:
performing irradiation with ion from a surface of each of a first semiconductor substrate and a second semiconductor substrate and forming a separation layer in each of the first semiconductor substrate and the second semiconductor substrate;
forming an oxide film on each surface of the first semiconductor substrate and the second semiconductor substrate;
disposing the first semiconductor substrate and the second semiconductor substrate on a glass substrate with the oxide film interposed therebetween;
performing a first heat treatment for separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer to form a first single-crystal semiconductor layer from the first semiconductor substrate and a second single-crystal semiconductor layer from the second semiconductor substrate with a certain distance over the glass substrate;
performing a second heat treatment on the glass substrate at a temperature of greater than or equal to a strain point of the glass substrate to shrink the glass substrate after separating each of the first semiconductor substrate and the second semiconductor substrate with the separation layer, wherein the first single-crystal semiconductor layer and the second single-crystal semiconductor layer are in contact with each other by performing the second heat treatment; and
after performing the second heat treatment, irradiating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer with laser light, thereby bonding the first single-crystal semiconductor layer with the second single-crystal semiconductor layer and integrating the first single-crystal semiconductor layer and the second single-crystal semiconductor layer to form a third single-crystal semiconductor layer comprising the first single-crystal semiconductor layer and the second single-crystal semiconductor layer.
32. The method for manufacturing an SOI substrate according to claim 31 , wherein the ion includes one or a plurality of atoms which is different in mass thereof.
33. The method for manufacturing an SOI substrate according to claim 32 , wherein the ion includes hydrogen ions which are different in mass.
34. The method for manufacturing an SOI substrate according to claim 33 , wherein the hydrogen ions which are different in mass are H + , H 2 + , and H 3 + ions.
35. The method for manufacturing an SOI substrate according to claim 34 , wherein, among the hydrogen ions, a proportion of H 3 + ion is higher than proportions of other ion species.
36. The method for manufacturing an SOI substrate according to claim 31 , wherein the first heat treatment for generating a crack is performed at a temperature lower than a temperature of the second heat treatment of which is higher than the strain point of the glass substrate.
37. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed according to claim 31 .
38. A method for manufacturing a semiconductor device comprising forming a semiconductor element from the SOI substrate formed accord to claim 31 , and
forming a display element which is electrically connected to the semiconductor element.
39. The method for manufacturing a semiconductor device according to claim 38 , wherein a liquid crystal display element is formed as the display element.
40. The method for manufacturing a semiconductor device according to claim 38 , wherein a light-emitting element is formed as the display element.