CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device
A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
1. A polishing method comprising:
contacting a semiconductor substrate having a metallic film with a polishing pad attached to a turntable; and
supplying a metallic film-CMP slurry having a viscosity of less than 2 mPa·sec onto the polishing pad to polish the metallic film, the metallic film-CMP slurry comprising:
water;
0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 40,000;
an oxidizing agent;
a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, the first complexing agent containing quinaldinic acid, quinolinic acid, and alkylbenzene sulfonate; and
colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
2. The method according to claim 1 , wherein the metallic film is formed with a wiring metal and the polyvinylpyrrolidone is incorporated in the slurry at a range of 0.03 to 0.3 wt % based on a total quantity of the CMP slurry.
3. The method according to claim 1 , wherein the metallic film is formed with a barrier metal and the polyvinylpyrrolidone is incorporated in the slurry at a range of 0.01 to 0.1 wt % based on a total quantity of the CMP slurry.
4. The method according to claim 1 , wherein the alkylbenzene sulfonate is selected from a group consisting of potassium dodecylbenzene sulfonate and ammonium dodecylbenzene sulfonate.
5. The method according to claim 1 , wherein the metallic film is a Cu film.
6. A method for manufacturing a semiconductor device comprising:
forming an insulating film above a semiconductor substrate;
forming a recess in the insulating film;
depositing a metal inside the recess as well as above the insulating film to form a metallic film; and
removing at least part of the metal which is deposited above the insulating film by CMP using a metallic film-CMP slurry having a viscosity of less than 2 mPa·sec, the metallic film-CMP slurry comprising:
water;
0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 40,000;
an oxidizing agent;
a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, the first complexing agent containing quinaldinic acid, quinolinic acid, and alkylbenzene sulfonate; and
colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
7. The method according to claim 6 , wherein the forming the metallic film is performed by forming a barrier metal above the insulating film and forming a wiring metal on the barrier metal.
8. The method according to claim 7 , wherein the metal to be removed by the CMP is the wiring metal, and the polyvinylpyrrolidone is incorporated in the slurry at a range of 0.03 to 0.3 wt % based on a total quantity of the CMP slurry.
9. The method according to claim 7 , wherein the metal to be removed by the CMP is the barrier metal, and the polyvinylpyrrolidone is incorporated in the slurry at a range of 0.01 to 0.1 wt % based on a total quantity of the CMP slurry.
10. The method according to claim 6 , wherein the alkylbenzene sulfonate is selected from a group consisting of potassium dodecylbenzene sulfonate and ammonium dodecylbenzene sulfonate.
11. The method according to claim 6 , wherein the metallic film is a Cu film.