Magnetoresistive effect device and magnetic random access memory using the same
A magnetoresistive effect element includes a magnetization fixed layer having substantially fixed magnetization direction. A magnetization variable layer has a variable magnetization direction, consists of a magnetic alloy that has a BCC structure and is expressed by Fe 1-x-y Co x Ni y (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and contains at least one additive element of V, Cr, and Mn in a range of 0<a≦20 at % (a is a content). An intermediate layer is disposed between the magnetization fixed layer and the magnetization variable layer and consists of a nonmagnetic material. The magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
1. A magnetoresistive effect element comprising:
a magnetization fixed layer having substantially fixed magnetization direction;
a magnetization variable layer having a variable magnetization direction, formed of a magnetic alloy that has a BCC structure and is expressed by Fe 1-x-y Co x Ni y (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and containing at least one additive element of V, Cr, and Mn in a range of 0<a≦20 at % (a is a content); and
an intermediate layer disposed between the magnetization fixed layer and the magnetization variable layer and formed of a nonmagnetic material,
wherein the magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
2. The element according to claim 1 , wherein
an amount of the additive element at a position in the magnetization variable layer decreases as the position gets close to the intermediate layer.
3. The element according to claim 1 , wherein
the magnetization variable layer and the magnetization fixed layer have perpendicular magnetization to the film plain thereof respectively.
4. A magnetoresistive effect element comprising:
a magnetization fixed layer having substantially fixed magnetization direction;
a magnetization variable layer having a variable magnetization direction, formed of a magnetic alloy that has a BCC structure and is expressed by Fe 1-x-y Co x Ni y (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and containing at least one additive element of Si, Ge, and Ga in a range of 0<a≦5 at % (a is a content); and
an intermediate layer disposed between the magnetization fixed layer and the magnetization variable layer and formed of a nonmagnetic material,
wherein the direction of magnetization of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
5. The element according to claim 4 , wherein
an amount of the additive element at a position in the magnetization variable layer decreases as the position gets close to the intermediate layer.
6. The element according to claim 4 , wherein
the magnetization variable layer and the magnetization fixed layer have perpendicular magnetization to the film plain thereof respectively.
7. A magnetoresistive effect element comprising:
a magnetization fixed layer having substantially fixed magnetization direction;
a magnetization variable layer having a variable magnetization direction, formed of a magnetic alloy that has a BCC structure and is expressed by Fe 1-x-y Co x Ni y (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and containing at least one additive element of Sr, Ti, Y, Zr, Nb, Mo, Tc, Hf, Ta, W, and Re in a range of 0<a≦10 at % (a is a content); and
an intermediate layer disposed between the magnetization fixed layer and the magnetization variable layer and formed of a nonmagnetic material,
wherein the magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
8. The element according to claim 7 , wherein
an amount of the additive element at a position in the magnetization variable layer decreases as the position gets close to the intermediate layer.
9. The element according to claim 7 , wherein
the magnetization variable layer and the magnetization fixed layer have perpendicular magnetization to the film plain thereof respectively.
10. A magnetoresistive effect element comprising:
a magnetization fixed layer having substantially fixed magnetization direction;
a magnetization variable layer having a variable magnetization direction, formed of a magnetic alloy expressed by Fe 1-x-y Co x Ni y (0≦x+y≦1, 0≦x≦1, 0≦y≦1), and containing at least one of Ru, Rh, Pd, Os, Ir, Pt, Au, and Ag; and
an intermediate layer disposed between the magnetization fixed layer and the magnetization variable layer and formed of a nonmagnetic material,
wherein the magnetization direction of the magnetization variable layer is switched by a bidirectional current passing through the magnetization fixed layer, the intermediate layer, and the magnetization variable layer.
11. The element according to claim 10 , wherein
the magnetization variable layer has an L1 0 ordered structure phase or an L1 2 ordered structure phase.
12. The element according to claim 10 , wherein
the magnetic variable layer contains at least one of V, Cr, and Mn in a range of 0.5≦a≦10 at % (a is a content).
13. The element according to claim 10 , wherein
the magnetic variable layer contains at least one of Si, Ge, and Ga in a range of 0.5≦a≦10 at % (a is a content).
14. The element according to claim 10 , wherein
the magnetic variable layer contains at least one of Sr, Ti, Y, Zr, Nb, Mo, Tc, Hf, Ta, W, and Re in a range of 0.5≦a≦10 at % (a is a content).
15. The element according to claim 10 , wherein
the magnetization variable layer and the magnetization fixed layer have perpendicular magnetization to the film plain thereof respectively.