Insulating film material, multilayer interconnection structure, method for manufacturing same, and method for manufacturing semiconductor device
To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of them represents a functional group containing any of a hydrocarbon and an unsaturated hydrocarbon.
1. An insulating film material comprising:
a silicon compound having a steric structure represented by Structural Formula (1) below:
where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of R 1 , R 2 , R 3 , and R 4 represents a functional group comprising any of a hydrocarbon and an unsaturated hydrocarbon.
2. The insulating film material according to claim 1 , wherein R 1 , R 2 , R 3 , and R 4 in the Structural Formula (1) represent at least any of an alkylene group, an alkenylene group, an alkynylene group, a cycloalkylene group, an arylene group, an aralkylene group, a carbonyl group, and a heterocyclic group, which are optionally substituted.
3. The insulating film material according to claim 2 , wherein R 1 , R 2 , R 3 , and R 4 in the Structural Formula (1) represent at least any of a methylene group, an ethylene group, a propylene group, a butylene group, a phenylene group, an ethyne group, an ethynylene group, and a vinylene group.
4. The insulating film material according to claim 1 , wherein a weight-average molecular weight of the silicon compound is 200 to 50,000.
5. The insulating film material according to claim 2 , wherein a weight-average molecular weight of the silicon compound is 200 to 50,000.
6. The insulating film material according to claim 3 , wherein a weight-average molecular weight of the silicon compound is 200 to 50,000.
7. A multilayer interconnection structure comprising:
an interconnection layer; and
an interlayer insulating film formed using an insulating film material,
wherein the insulating film material comprises a silicon compound having a steric structure represented by Structural Formula (1) below:
where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of R 1 , R 2 , R 3 , and R 4 represents a functional group comprising any of a hydrocarbon and an unsaturated hydrocarbon.
8. The multilayer interconnection structure according to claim 7 , wherein a C/O atomic ratio in the interlayer insulating film measured by X ray photoelectron spectroscopy is 0.2 to 5.0.
9. The multilayer interconnection structure according to claim 7 , wherein
the insulating film formed using an insulating film material is contained as an etching stopper film, and wherein
the insulating film material comprises a silicon compound having a steric structure represented by Structural Formula (1) below:
where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of R 1 , R 2 , R 3 , and R 4 represents a functional group comprising any of a hydrocarbon and an unsaturated hydrocarbon.
10. The multilayer interconnection structure according to claim 9 , wherein a C/O atomic ratio in the etching stopper film measured by X ray photoelectron spectroscopy is 0.2 to 5.0.
11. The multilayer interconnection structure according to claim 7 , wherein
the insulating film formed using an insulating film material is contained as a protective film during chemical-mechanical polishing, and wherein
the insulating film material comprises a silicon compound having a steric structure represented by Structural Formula (1) below:
where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of R 1 , R 2 , R 3 , and R 4 represents a functional group comprising any of a hydrocarbon and an unsaturated hydrocarbon.
12. The multilayer interconnection structure according to claim 11 , wherein a C/O atomic ratio in the protective film measured by X ray photoelectron spectroscopy is 0.2 to 5.0.
13. The multilayer interconnection structure according to claim 7 , wherein a porosity in the interlayer insulating film is 10% to 80%, and a thickness thereof is 2 nm to 300 nm.
14. A method for manufacturing a semiconductor device, comprising: forming a multilayer interconnection structure by using a method for manufacturing a multilayer interconnection structure on a surface to be processed, wherein the method for manufacturing a multilayer interconnection structure comprises:
forming an insulating film by using an insulating film material on a surface to be processed;
forming an interconnection pattern by etching the insulating film; and
forming an interconnection by using the interconnection pattern,
wherein the insulating film material comprises a silicon compound having a steric structure represented by Structural Formula (1) below:
where, R 1 , R 2 , R 3 , and R 4 may be the same or different and at least one of R 1 , R 2 , R 3 , and R 4 represents a functional group comprising any of a hydrocarbon and an unsaturated hydrocarbon.
15. The method for manufacturing a semiconductor device according to claim 14 , wherein the etching in the step of forming the interconnection pattern is at least one of plasma treatment and reagent coating.