Methods of ion milling for magnetic heads and systems formed thereby

1. A method, comprising:

ion milling at a first angle of greater than about 25 degrees from normal relative to a media facing side of a thin film region of a magnetic head or component thereof for recessing the thin film region at about a constant rate for films of interest of the thin film region, planes of deposition of the films being oriented about perpendicular to the media facing side; and

ion milling or plasma sputtering at a second angle of less than about 25 degrees from normal relative to the media facing side of the thin film region for recessing magnetic films therein faster than insulating films therein, the second angle being smaller than the first angle,

wherein the magnetic films are recessed more than the insulating films after the ion milling and/or plasma sputtering steps are completed.

2. The method of claim 1 , wherein the thin films reside in a gap between a substrate and a closure, the substrate and closure forming portions of a tape bearing surface.

3. The method of claim 1 , wherein the first angle is between about 50 degrees and about 70 degrees.

4. The method of claim 1 , wherein the second angle is between about 0 degrees and about 25 degrees.

5. The method of claim 1 , wherein at least some of the magnetic films form write poles.

6. The method of claim 1 , wherein at least some of the magnetic films form reader shields.

7. The method of claim 1 , wherein the milling or sputtering is performed continuously and repeatedly in both directions between the first and second angles.

8. The method of claim 1 , wherein the milling or sputtering is performed in alternating fashion in the first and second angles.

9. The method of claim 1 , wherein the milling at the first angle is performed before the milling or sputtering at the second angle.

10. The method of claim 9 , wherein the milling or sputtering is continuously performed during a transition from the first angle to the second angle.

11. The method of claim 1 , wherein the milling or sputtering at the second angle is performed before the milling at the first angle.

12. The method of claim 11 , wherein the milling or sputtering is continuously performed during a transition from the second angle to the first angle.

13. The method of claim 1 , further comprising adding a protective coating to the media facing side of the thin film region.

14. The method of claim 13 , wherein the protective coating above the thin film region does not extend to a plane extending along a media facing side of a substrate on which the films are formed.

15. The method of claim 13 , wherein the protective coating above the thin film region extends to a plane extending along a media facing side of a substrate on which the films are formed.

16. A method, comprising:

ion milling at a first angle of between about 25 degrees and about 70 degrees from normal relative to a media facing side of a thin film region of a magnetic head or component thereof positioned between a substrate and a closure for recessing the thin film region at about a constant rate for all films of the thin film region, planes of deposition of the films being oriented about perpendicular to the media facing side, wherein the substrate and closure form portions of a tape bearing surface; and

ion milling or plasma sputtering at a second angle of between about 0 and about 25 degrees from normal relative to the media facing side of the thin film region for recessing magnetic films therein faster than insulating films therein.

17. The method of claim 16 , wherein the magnetic films are recessed more than the insulating films after the ion milling and/or plasma sputtering steps are completed.

18. The method of claim 16 , further comprising adding a protective coating to the media lacing side of the thin film region.

19. The method of claim 18 , wherein the protective coating above the thin film region does not extend to a plane extending along a media facing side of a substrate on which the films are formed.