Method of cutting semiconductor wafer, semiconductor chip apparatus, and chamber to cut wafer
A method of cutting a semiconductor wafer includes preparing a semiconductor wafer including a scribe region and a chip region, forming a groove in the scribe region, loading the semiconductor wafer with the groove formed therein in a chamber, and cutting the semiconductor wafer into a plurality of chips through increasing a pressure of the chamber by a first pressure change rate, and then reducing the pressure of the chamber by a second pressure change rate.
1. A method for cutting a semiconductor wafer, comprising:
preparing a semiconductor wafer comprising a scribe region and a chip region;
forming a groove in the scribe region;
loading the semiconductor wafer with the groove formed therein in a chamber; and
cutting the semiconductor wafer into a plurality of chips through increasing a pressure of the chamber by a first pressure change rate, and then reducing the pressure of the chamber by a second pressure change rate.
2. The method of claim 1 , wherein the second pressure change rate is greater than the first pressure change rate.
3. The method of claim 1 , wherein the semiconductor wafer increases in volume according to the second pressure change rate, and is cut into the plurality of chips.
4. The method according to claim 1 , wherein the groove is formed using a diamond cutting method.
5. The method according to claim 1 , wherein the preparing of the semiconductor wafer comprises attaching the semiconductor wafer to a dicing stage, using a die attach film.
6. The method of claim 1 , further comprising, prior to the forming of the groove, forming a dam on the scribe region to surround the chip region.
7. The method of claim 6 , wherein the dam is formed of an adhesive film.
8. The method of claim 7 , wherein the adhesive film has a thickness of about 2 μm or more.
9. The method of claim 7 , wherein the adhesive film comprises acryl polymer.
10. The method of claim 1 , further comprising, after the forming of the groove, forming a dam at either side of the groove to enclose the chip region.
11. The method of claim 1 , further comprising, after the forming of the groove, forming a dam to fill the groove to enclose the chip region.
12. The method of claim 11 , wherein the groove is formed with a depth of about 2 μm or more.
13. The method of claim 12 , wherein the dam is formed of an adhesive film having a thickness of about 2 μm or more.
14. The method of claim 1 , wherein the chamber comprises vacuum equipment in which the semiconductor wafer is loaded, the method further comprising, after the loading of the semiconductor wafer, applying vibrations to the semiconductor wafer.
15. The method of claim 14 , wherein the reducing of the pressure of the chamber is performed simultaneously with the applying of the vibrations to the semiconductor wafer.