Semiconductor device and method of fabricating the same
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
1. A semiconductor device comprising:
an isolation layer recessed from a surface of a semiconductor substrate; and
an active region defined by the isolation layer in the semiconductor substrate, the active region protruding upward with respect to the isolation layer, wherein
a curvature radius of edge portions of the active region is in the range from about ⅓ to about ½ of a width of an upper portion of the active region.
2. The semiconductor device of claim 1 , wherein the curvature radius of edge portions of the active region is about ½ of a width of the upper portion of the active region.
3. The semiconductor device of claim 1 , wherein the width of the active region increases in a direction toward the isolation layer.