Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
View Patent ↗A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
1. A device having a structure that includes a lateral epitaxial overgrowth layer grown in a non-polar direction and having a top surface that is non-polar, the lateral epitaxial overgrowth layer comprising a non-polar III-nitride film with a reduction in dislocation density as compared to III-nitride films grown heteroepitaxially containing dislocation densities in excess of 10 8 cm −2 .
2. The device of claim 1 , wherein the device is a spontaneous and piezoelectric polarization-free device.
3. The device of claim 1 , wherein the lateral epitaxial overgrowth layer resides on a surface of a direct growth layer, the direct growth layer comprising a III-nitride film.
4. The device of claim 1 , wherein the non-polar III-nitride film is a planar film.
5. The device of claim 1 , wherein the non-polar III-nitride film is an m-plane gallium nitride (GaN) film.
6. The device of claim 1 , wherein the non-polar III-nitride film contains dislocation densities less than 10 8 cm −2 .
7. The device of claim 1 , wherein the device is a laser diode, light-emitting diode or transistor.