Lateral diffusion field effect transistor with a trench field plate
View Patent ↗A dielectric material layer is formed on a bottom surface and sidewalls of a trench in a semiconductor substrate. The silicon oxide layer forms a drift region dielectric on which a field plate is formed. Shallow trench isolation may be formed prior to formation of the drift region dielectric, or may be formed utilizing the same processing steps as the formation of the drift region dielectric. A gate dielectric layer is formed on exposed semiconductor surfaces and a gate conductor layer is formed on the gate dielectric layer and the drift region dielectric. The field plate may be electrically tied to the gate electrode, may be an independent electrode having an external bias, or may be a floating electrode. The field plate biases the drift region to enhance performance and extend allowable operating voltage of a lateral diffusion field effect transistor during operation.
1. A semiconductor structure comprising:
a trench located in a semiconductor substrate and containing at least one trench sidewall and a trench bottom surface;
a body having a doping of a first conductivity type and located in said semiconductor substrate and not contacting said trench;
a drift region having a doping of a second conductivity type throughout and physically contacting said at least one sidewall and said trench bottom surface, wherein said second conductivity type is the opposite of said first conductivity type;
a drift region dielectric of unitary construction comprising a dielectric material, located directly on and inside of said trench, and containing a bottom dielectric portion vertically abutting said trench bottom surface and a sidewall dielectric portion laterally abutting said at least on trench sidewall;
a gate electrode abutting a gate dielectric, wherein said drift region, said body, and said drift region dielectric contact an entirety of a bottom surface of said gate dielectric;
a gate electrode abutting a gate dielectric; and
a field plate located within said trench, vertically abutting said bottom dielectric portion, and disjoined from said gate electrode.
2. The semiconductor structure of claim 1 , further comprising a field plate cap comprising a dielectric material and abutting said gate electrode and said field plate.
3. The semiconductor structure of claim 2 , wherein a top surface of said field plate cap is substantially coplanar with a top surface of said semiconductor substrate.
4. The semiconductor structure of claim 2 , further comprising a shallow trench isolation dielectric portion embedded in said semiconductor substrate, wherein said shallow trench isolation dielectric portion comprises a same material as said dielectric material of said field plate cap.
5. The semiconductor structure of claim 1 , further comprising a contact via vertically abutting said field plate and electrically isolated from said gate electrode.
6. The semiconductor structure of claim 1 , wherein said field plate is electrically floating and is capacitively coupled to said gate electrode.
7. The semiconductor structure of claim 1 , further comprising:
a source region having a doping of said second conductivity type, located in said semiconductor substrate, abutting said body, and disjoined from said drift region; and
a drain region having a doping of said second conductivity type, located in said semiconductor substrate, abutting said drift region, and disjoined from said body.
8. The semiconductor structure of claim 7 , wherein said drift region and drain region contacts all of said at least one sidewall of said trench and said trench bottom surface.
9. The semiconductor structure of claim 7 , wherein said field plate is electrically isolated from said source region, and is electrically biased independent of an electrical bias to said gate electrode.
10. The semiconductor structure of claim 7 , wherein said field plate is electrically isolated from said source region, and is electrically connected to said gate electrode.
11. The semiconductor structure of claim 1 , wherein said drift region and a drain region contacts an entirety of sidewalls of said trench and an entirety of said trench bottom surface.
12. The semiconductor structure of claim 1 , wherein said trench extends from a surface of said semiconductor substrate to a depth, and a vertical distance between a topmost surface of said drift region and a bottommost surface of said drift region exceeds said depth.
13. The semiconductor structure of claim 1 , further comprising a tub region having a doping of said second conductivity type and contacting an entirety of a bottommost surface of said drift region and an entirety of a bottommost surface of said body.
14. The semiconductor structure of claim 1 , further comprising a contact via comprising a conductive material and contacting said field plate, wherein said contact via extends from above said semiconductor substrate through a top surface of said semiconductor substrate to a top surface of said field plate.