Intermediate potential generation circuit
Provided is an intermediate potential generation circuit with a lower power supply potential. The intermediate potential generation circuit includes: a current mirror circuit including a first transistor and a second transistor each having a source input with a power supply potential; a current source circuit including a third transistor having a drain connected to a drain of the first transistor; a grounded source amplifier circuit including a fourth transistor having a gate input with the intermediate potential, and a drain connected to a drain of the second transistor; a parallel connection circuit including a fifth transistor connected in parallel with the first transistor, and a sixth transistor connected in parallel with the second transistor; and a source follower circuit including a seventh transistor and an eighth transistor having gates that are connected in common to each other, and connected with the drains of the second transistor and the sixth transistor.
1. An intermediate potential generation circuit, comprising:
a reference potential generation circuit that generates a reference potential serving as a reference for an intermediate potential;
a current mirror circuit including a first transistor and a second transistor each having a source input with a power supply potential;
a current source circuit including a third transistor having a gate input with the reference potential, a source grounded, and a drain connected to a drain of the first transistor;
a grounded source amplifier circuit including a fourth transistor having a gate input with the intermediate potential, a source grounded, and a drain connected to a drain of the second transistor;
a parallel connection circuit including a fifth transistor having a gate input with the intermediate potential, and a source and a drain respectively connected in common to a source and the drain of the first transistor, and a sixth transistor having a gate input with the intermediate potential, and a source and a drain respectively connected in common to a source and the drain of the second transistor; and
a source follower circuit including a seventh transistor and an eighth transistor having opposite carrier structures of p-type and n-type, and gates that are connected in common to each other, and connected with the drains of the second transistor and the sixth transistor.
2. An intermediate potential generation circuit according to claim 1 , wherein the current mirror circuit copies the reference potential.