Method of cleaning a patterning device, method of depositing a layer system on a substrate, system for cleaning a patterning device, and coating system for depositing a layer system on a substrate
A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, where the method includes the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device, the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 μm/min. In order to generate a pulsed cleaning plasma, pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently.
1. A system for cleaning a patterning device, the patterning device having at least an organic coating material comprising an organic light emitting diode material (OLED material) deposited thereon, the system comprising:
a plasma source in a plasma etching process for providing a cleaning plasma for removing the organic coating material from the patterning device; and
a device for maintaining a temperature of the patterning device of less than a critical temperature causing damage to the patterning device,
wherein said plasma source comprises a remote plasma source that activates at least an activation gas in an activation zone, and said patterning device is placed outside said activation zone during said plasma etching process.
2. The system according to claim 1 , wherein the temperature of the patterning device is less than 120° C.
3. The system according to claim 1 , wherein the plasma source is a pulsed plasma source.
4. A system for cleaning a patterning device, the patterning device having at least an organic coating material comprising an organic light emitting diode material (OLED material) deposited thereon, the system comprising:
a plasma source in a plasma etching process for providing a cleaning plasma for removing the organic coating material from the patterning device,
wherein a temperature of the patterning device is maintained at a temperature of less than a critical temperature causing damage to the patterning device, and
wherein said plasma source comprises a remote plasma source that activates at least an activation gas in an activation zone, and said patterning device is placed outside said activation zone during said plasma etching process.