Thermal chemical vapor deposition methods, and thermal chemical vapor deposition systems
One embodiment thermal chemical vapor deposition method includes exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter. A reactive gas is flowed to the material on the substrate, with the reactive gas being reactive with the material. After flowing the reactive gas, an inert purge gas is flowed through the chamber and through the vacuum pump. The flowing of the inert purge gas to the vacuum pump is through a second exhaust line not comprising the filter. The exposing, the flowing of the reactive gas, and the flowing of the inert purge gas are repeated effective to deposit material of desired thickness on the substrate.
1. A thermal chemical vapor deposition method, comprising:
exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising a filter;
flowing a reactive gas to the material on the substrate, the reactive gas being reactive with the material;
after flowing the reactive gas, flowing an inert purge gas through the chamber and through the vacuum pump, the flowing of the inert purge gas to the vacuum pump being through a second exhaust line not comprising the filter and comprising another pump through which the inert purge gas flows to the vacuum pump; and
repeating the thermal chemical vapor depositing material, exhausting of unreacted first and second deposition precursors, flowing of the reactive gas, and flowing of the inert purge gas effective to deposit material of desired thickness on the substrate, at least some of the reactive gas flowing through the second exhaust line.
2. The method of claim 1 wherein the reactive gas comprises one of the first and second deposition precursors.
3. The method of claim 1 wherein the reactive gas does not comprise either of the first or second deposition precursors.
4. The method of claim 1 wherein the exposing forms the material to comprise TiN.
5. The method of claim 4 wherein one of the first and second deposition precursors comprises NH 3 , and the reactive gas comprises NH 3 .
6. The method of claim 4 wherein one of the first and second deposition precursors comprises NH 3 , and the reactive gas comprises H 2 .
7. The method of claim 1 wherein the first exhaust line comprises multiple filters through which the exhausting occurs.
8. The method of claim 1 comprising flowing an inert purge gas to the material on the substrate intermediate the exposing and the flowing of the reactive gas.
9. The method of claim 1 wherein the second exhaust line comprises no filters through which the inert purge gas flows to the vacuum pump.
10. The method of claim 1 wherein individual of the inert gas flowings are less than 5 seconds in duration.
11. The method of claim 1 wherein individual of the inert gas flowings are no greater than 3 seconds in duration.
12. The method of claim 1 wherein the another pump is operated at equal pumping capacity to that of the vacuum pump during flow of the inert purge gas through the another pump.
13. The method of claim 1 wherein the another pump is operated at greater pumping capacity than that of the vacuum pump during flow of the inert purge gas through the another pump.
14. The method of claim 1 wherein the inert purge gas is precluded from flowing through the filter during at least most of the flowing of the inert purge gas.
15. A thermal chemical vapor deposition method, comprising:
exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line comprising two filters in series;
flowing a first inert purge gas through the chamber and through the vacuum pump via the first exhaust line;
after flowing the first inert purge gas, flowing one of the first and second deposition precursors to the material on the substrate and through the vacuum pump, the one of the first and second deposition precursors being reactive with the material;
after flowing the reactive gas, flowing a second inert purge gas through the chamber and through the vacuum pump, the flowing of the second inert purge gas to the vacuum pump being through a second exhaust line, the second exhaust line not comprising any filter and comprising another pump through which gas flows to the vacuum pump during the flowing the second inert purge gas; and
repeating the thermal chemical vapor depositing material, exhausting of unreacted first and second deposition precursors, the flowing the first inert purge gas, the flowing of the one of the first and second deposition precursors, and the flowing the second inert purge gas effective to deposit material of desired thickness on the substrate, at least some of the reactive gas flowing through the second exhaust line.
16. A thermal chemical vapor deposition method, comprising:
exposing a substrate within a chamber to first and second deposition precursors effective to thermally chemical vapor deposit a material on the substrate, and exhausting unreacted first and second deposition precursors from the chamber through a vacuum pump via a first exhaust line;
flowing a reactive gas to the material on the substrate, the reactive gas being reactive with the material;
after flowing the reactive gas, flowing an inert purge gas through the chamber and through the vacuum pump, the flowing of the inert purge gas to the vacuum pump being through a second exhaust line comprising another pump through which the inert purge gas flows prior to flowing to the vacuum pump; and
repeating the thermal chemical vapor depositing material, exhausting unreacted first and second deposition precursors, flowing of the reactive gas, and flowing of the inert purge gas effective to deposit material of desired thickness on the substrate, at least some of the reactive gas flowing through the second exhaust line.
17. A thermal chemical vapor deposition method of depositing titanium nitride on a substrate, comprising:
exposing the substrate within a chamber to TiCl 4 and NH 3 effective to thermally chemical vapor deposit a TiN-comprising material on the substrate, and exhausting unreacted TiCl 4 and NH 3 from the chamber through a vacuum pump via a first exhaust line comprising two filters in series, the TiN-comprising material comprising chlorine;
flowing a first inert purge gas through the chamber and through the vacuum pump;
after the flowing the first inert purge gas, flowing NH 3 to the TiN-comprising material on the substrate and through the vacuum pump, the NH 3 flowing removing chlorine from the TiN-comprising material;
after the NH 3 flowing, flowing a second inert purge gas through the chamber and through the vacuum pump, the flowing of the second inert purge gas to the vacuum pump being through a second exhaust line not comprising either of the two filters, the second exhaust line comprising another pump through which the inert purge gas flows to the vacuum pump; and
repeating the thermal chemical vapor depositing TiN-comprising material, the exhausting, the first flowing, the NH 3 flowing, and the second flowing effective to deposit TiN-comprising material of desired thickness on the substrate at least some of the NH 3 flowing through the second exhaust line.