Method for manufacturing a semiconductor device with metal-containing cap layers
A method for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a patterned substrate containing Cu metal surfaces and dielectric layer surfaces, forming a patterned mask layer on the patterned substrate, where the patterned mask layer contains openings that expose the Cu metal surfaces. The method further includes depositing a metal-containing layer on the Cu metal surfaces, depositing an additional metal-containing layer on the patterned mask layer, and removing the patterned mask layer and the additional metal-containing layer from the patterned substrate to selectively form metal-containing cap layers on the Cu metal surfaces.
1. A method of forming a semiconductor device, comprising:
providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;
forming a patterned mask layer on the patterned substrate, the patterned mask layer containing openings that expose the Cu metal surfaces;
depositing a metal-containing layer on the Cu metal surfaces;
depositing an additional metal-containing layer on the patterned mask layer; and
removing the patterned mask layer and the additional metal-containing layer from the patterned substrate to selectively form metal-containing cap layers on the Cu metal surfaces, wherein depositing the metal-containing layer and the additional metal-containing layer comprises:
depositing a metal layer on the Cu metal surfaces,
depositing an additional metal layer on the patterned mask layer, and
thereafter, incorporating a non-metal dopant into the metal layer and into the additional metal layer.
2. The method of claim 1 , wherein the metal-containing layer and the additional metal-containing layer contain a metal selected from platinum (Pt), gold (Au), ruthenium (Ru), cobalt (Co), tungsten (W), rhodium (Rh), iridium (Ir), or palladium (Pd), or a combination of two or more thereof.
3. The method of claim 2 , wherein the metal-containing layer and the additional metal-containing layer further contain a non-metal dopant selected from phosphorus (P), boron (B), nitrogen (N), fluorine (F), chlorine (Cl), bromine (Br), silicon (Si), or germanium (Ge), or a combination of two or more thereof.
4. The method of claim 1 , wherein the incorporating comprises exposing the metal layer and the additional metal layer to a non-metal dopant gas selected from PH 3 , BH 3 , B 2 H 6 , BF 3 , NF 3 , NH 3 , N 2 , N 2 H 4 , PF 3 , PBr 3 , BCl 3 , BI 3 , SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , Si 2 Cl 6 , SiH 3 F, SiH 2 F, SiHF 3 , SiF 4 , Si 2 F 6 , GeH 4 , or GeCl 4 , or a combination of two or more thereof.
5. The method of claim 4 , wherein the incorporating comprises exposing the metal layer and the additional metal layer to a gas cluster ion beam (GCIB) or an ion implant beam containing the dopant gas.
6. The method of claim 1 , wherein removing the patterned mask layer comprises a wet removal process or a dry ashing process.
7. The method of claim 1 , further comprising
removing at least a portion of the additional metal-containing layer from the patterned mask layer in a cleaning process prior to removing the patterned mask layer.
8. A method of forming a semiconductor device, comprising:
providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;
forming a patterned mask layer on the patterned substrate, the patterned mask layer containing openings that expose the Cu metal surfaces;
depositing a metal-containing layer on the Cu metal surfaces;
depositing an additional metal-containing layer on the patterned mask layer, wherein depositing the metal-containing layer and the additional metal-containing layer comprises simultaneously exposing the patterned mask layer and the Cu metal surfaces to a metal-containing precursor gas and a non-metal dopant gas selected from PH 3 , BH 3 , B 2 H 6 , BF 3 , NF 3 , NH 3 , N 2 H 4 , PF 3 , PBr 3 , BCl 3 , BI 3 , SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , Si 2 Cl 6 , SiH 3 F, SiH 2 F, SiHF 3 , SiF 4 , Si 2 F 6 , GeH 4 , or GeCl 4 , or a combination of two or more thereof; and
removing the patterned mask layer and the additional metal-containing layer from the patterned substrate to selectively form metal-containing cap layers on the Cu metal surfaces.
9. The method of claim 8 , wherein depositing the metal-containing layer and the additional metal-containing layer comprises depositing a compound of a metal and a non-metal dopant on the patterned mask layer and on the Cu metal surfaces.
10. The method of claim 8 , wherein the metal-containing layer and the additional metal-containing layer contain a metal selected from platinum (Pt), gold (Au), ruthenium (Ru), cobalt (Co), tungsten (W), rhodium (Rh), iridium (Ir), or palladium (Pd), or a combination of two or more thereof.
11. The method of claim 8 , wherein removing the patterned mask layer comprises a wet removal process or a dry ashing process.
12. The method of claim 8 , further comprising
removing at least a portion of the additional metal-containing layer from the patterned mask layer in a cleaning process prior to removing the patterned mask layer.
13. A method of forming a semiconductor device, comprising:
providing a patterned substrate containing copper (Cu) metal surfaces and dielectric layer surfaces;
forming a patterned mask layer on the patterned substrate, the patterned mask layer containing openings that expose the Cu metal surfaces;
depositing a Ru-containing layer on the Cu metal surfaces;
depositing an additional Ru-containing layer on the patterned mask layer, wherein depositing the Ru-containing layer and the additional Ru-containing layer comprises:
depositing a Ru metal layer on the Cu metal surfaces,
depositing an additional Ru metal layer on the patterned mask layer, and thereafter, incorporating a non-metal dopant into the Ru metal layer and into the additional Ru metal layer; and
removing the patterned mask layer and the additional Ru-containing layer from the patterned substrate to selectively form Ru-containing cap layers on the Cu metal surfaces.
14. The method of claim 13 , wherein depositing the Ru-containing layer and the additional Ru-containing layer comprises a thermal chemical vapor deposition (CVD) process using Ru 3 (CO) 12 precursor vapor and CO carrier gas.
15. The method of claim 13 , wherein the Ru-containing layer and the additional Ru-containing layer further contain a non-metal dopant selected from phosphorus (P), boron (B), nitrogen (N), fluorine (F), chlorine (Cl), bromine (Br), silicon (Si), or germanium (Ge), or a combination of two or more thereof.
16. The method of claim 13 , wherein the incorporating comprises exposing the Ru metal layer and the additional Ru metal layer to a non-metal dopant gas selected from PH 3 , BH 3 , B 2 H 6 , BF 3 , NF 3 , NH 3 , N 2 , N 2 , N 2 H 4 , PF 3 , PBr 3 , BCl 3 , BI 3 , SiH 4 , Si 2 H 6 , SiH 3 Cl, SiH 2 Cl 2 , SiHCl 3 , SiCl 4 , Si 2 Cl 6 , SiH 3 F, SiH 2 F, SiHF 3 , SiF 4 , Si 2 F 6 , GeH 4 , or GeCl 4 , or a combination of two or more thereof.
17. The method of claim 16 , wherein the incorporating comprises exposing the Ru metal layer and the additional Ru metal layer to a gas cluster ion beam (GCIB) or an ion implant beam containing the dopant gas.
18. The method of claim 13 , wherein removing the patterned mask layer comprises a wet removal process or a dry ashing process.
19. The method of claim 13 , further comprising:
removing at least a portion of the additional Ru-containing layer from the patterned mask layer in a cleaning process prior to removing the patterned mask layer.