Thermally stable multilayer mirror for the EUV spectral range

1. A multilayer minor for extreme ultraviolet (EUV) radiation, the multilayer mirror comprising:

a substrate; and

a layer sequence arranged on the substrate, the layer sequence comprising a plurality of layer pairs, each layer pair comprising a first layer composed of a first material and a second layer composed of a second material;

wherein the layer sequence is reflective for extreme ultraviolet radiation;

wherein the first layers and the second layers each have a thickness of more than 2 nm and wherein the sum of the thickness of the first layer and the thickness of the second layer is between 6.5 nm and 7.5 nm;

wherein the first material or the second material comprises a silicon boride; and

wherein the silicon boride is a compound.

2. The multilayer mirror as claimed in claim 1 , wherein the first material is a silicon boride and the second material is molybdenum.

3. The multilayer mirror as claimed in claim 1 , wherein the substrate has a curved surface.

4. The multilayer mirror as claimed in claim 3 , wherein the surface of the substrate is curved aspherically.

5. The multilayer mirror as claimed in claim 1 , further comprising a covering layer overlying the layer sequence.

6. The multilayer mirror as claimed in claim 5 , wherein the covering layer comprises an oxide, silicide, nitride, carbide or boride.

7. The multilayer mirror as claimed in claim 5 , wherein the covering layer comprises at least one of ruthenium, rhodium, scandium and/or zirconium.

8. The multilayer mirror as claimed in claim 1 , further comprising a heating device that is provided in order to heat the multilayer minor at an operating temperature of 300° C. or more.

9. The multilayer mirror as claimed in claim 8 , wherein the heating device is provided in order to heat the multilayer minor at an operating temperature of 400° C. or more.

10. The multilayer mirror as claimed in claim 8 , wherein the heating device is fitted to the substrate.

11. The multilayer mirror as claimed in claim 1 , wherein the multilayer minor is a collector minor of an EUV radiation source.

12. The use of a multilayer minor as claimed in claim 1 for the reflection of EUV radiation at an operating temperature of 300° C. to 500° C.

13. The multilayer mirror as claimed in claim 1 , wherein the silicon boride is SiB 4 .

14. The multilayer minor as claimed in claim 1 , wherein the silicon boride is SiB 6 .

15. The multilayer mirror as claimed in claim 1 , wherein the silicon boride is a stoichiometric compound.

16. A radiation arrangement comprising:

a radiation source that emits radiation in an extreme ultraviolet (EUV) range; and

a collector mirror adjacent the radiation source, the collector minor comprising a substrate and a layer sequence arranged on the substrate, the layer sequence comprising a plurality of layer pairs, each layer pair comprising a first layer composed of a first material and a second layer composed of a second material, wherein the first layers and the second layers each have a thickness of more than 2 nm, wherein the sum of the thickness of the first layer and the thickness of the second layer is between 6.5 nm and 7.5 nm and wherein the first material or the second material comprises a silicon boride compound.

17. The arrangement as claimed in claim 16 , further comprising a heating device attached to the substrate.

18. The arrangement as claimed in claim 16 , wherein the first material is a silicon boride compound and the second material is molybdenum.

19. The arrangement as claimed in claim 16 , wherein the substrate has an aspherically curved surface.

20. The arrangement as claimed in claim 16 , wherein the first material or the second material comprises a stoichiometric silicon boride compound.