Plasma processing apparatus and electrode used therein

1. An electrode for use as an upper electrode in a plasma processing apparatus for performing a specific plasma processing on a target substrate placed in a processing chamber having the upper electrode and a lower electrode the electrode for use as the upper electrode comprising:

an electrode plate which has a plurality of gas injection openings;

a support for detachably supporting the electrode plate; and

a hollow portion serving as a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a thickness of a center portion thereof is thicker than that of an edge portion thereof,

wherein dimensions of the hollow portion are determined such that an electric field perpendicular to the upper electrode is generated in the hollow portion when a high-frequency electric power is supplied to the upper electrode and a resonance occurs at the high-frequency.

2. The electrode of claim 1 , wherein the hollow portion has a shape in which disk-like portions having different diameters from each other are stacked in multiple stages, and the disk-like portions are stacked from the contact surface with the electrode plate in decreasing order of the diameters.

3. The electrode of claim 2 , wherein the hollow portion has three disk-like portions.

4. The electrode of claim 1 , wherein a dielectric member is disposed in the hollow portion.

5. The electrode of claim 4 ,

wherein the dielectric member has a relative dielectric constant of 1 to 10, and

wherein the diameters of the first, the second and the third disk-like dielectric portions are in ranges from about 80% to 120%, from about 60% to 80% and from about 40% to 60% of the diameter of the target substrate, respectively.

6. The electrode of claim 4 , wherein the dielectric member is made of a material selected from the group consisting of a quartz, a ceramic, and a resin.

7. The electrode of claim 4 , wherein the dielectric member is formed in a single body.

8. The electrode of claim 1 , further comprising an annular outer electrode surrounding the upper electrode.

9. The electrode of claim 1 , wherein the support is divided into an upper member and a lower member serving as a cooling plate, and wherein the hollow portion is formed in the lower member.

10. An electrode for use as an upper electrode in a plasma processing apparatus for performing a specific plasma processing on a target substrate placed in a processing chamber having the upper electrode and a lower electrode, the electrode for use as the upper electrode comprising:

an electrode plate which has a plurality of divided gas inlets, each gas inlet being provided with a plurality of gas injection openings;

a support for detachably supporting the electrode plate;

a hollow portion serving as a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a thickness different from that of an edge portion thereof; and

a partition member for partitioning the hollow portion into a plurality of regions, each region belonging to one of the gas inlets.

11. The electrode of claim 10 , wherein the partition member is formed of an insulator.

12. The electrode of claim 10 , wherein the partition member is formed of a resin ring whose side surface is a tapered surface having a cross section of an approximate v shape.

13. The electrode of claim 10 , wherein the partition member is formed by thermally spraying ceramic-based material.

14. A plasma processing apparatus comprising:

a processing chamber in which a target subject is processed therein; and

a lower electrode, disposed in the processing chamber, to support the target subject; and

an upper electrode facing the lower electrode,

wherein the upper electrode includes:

an electrode plate which has a plurality of divided gas inlets, each gas inlet being provided with a plurality of gas injection openings;

a support for detachably supporting the electrode plate; and

a hollow portion serving as a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a thickness different from that of an edge portion thereof, and

wherein dimensions of the hollow portion are determined such that an electric field perpendicular to the upper electrode is generated in the hollow portion when a high-frequency electric power is supplied to the upper electrode and a resonance occurs at the high-frequency.

15. The electrode of claim 14 , wherein the support is divided into an upper member and a lower member serving as a cooling plate, and wherein the hollow portion is formed in the lower member.

16. The electrode of claim 14 , wherein a dielectric member is disposed in the hollow portion.

17. The electrode of claim 14 , further comprising an annular outer electrode surrounding the upper electrode.

18. A plasma processing apparatus comprising:

a processing chamber in which a target subject is processed therein;

a lower electrode, disposed in the processing chamber, to support the target subject; and

an upper electrode facing the lower electrode,

wherein the upper electrode includes:

an electrode plate which has a plurality of gas injection openings;

a support for detachably supporting the electrode plate; and

a hollow portion serving as a dielectric portion, provided on a contact surface of the support with the electrode plate,

wherein the hollow portion has a shape in which a first, a second and a third disk-like portions having different diameters from each other are stacked from the contact surface with the electrode plate such that the thickness of the center portion thereof is thicker than that of the edge portion thereof, and

wherein dimensions of the hollow portion are determined such that an electric field perpendicular to the upper electrode is generated in the hollow portion when a high-frequency electric power is supplied to the upper electrode and a resonance occurs at the high-frequency.

19. A plasma processing apparatus comprising:

a processing chamber in which a target subject is processed therein;

a lower electrode, disposed in the processing chamber, to support the target subject; and

an upper electrode facing the lower electrode,

wherein the upper electrode includes:

an electrode plate which has a plurality of divided gas inlets, each gas inlet being provided with a plurality of gas injection openings;

a support for detachably supporting the electrode plate;

a hollow portion serving as a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a thickness different from that of an edge portion thereof; and

a partition member for partitioning the hollow portion into a plurality of regions, each region belonging to one of the gas inlets.

20. The plasma processing apparatus of claim 19 , wherein the plurality of divided gas inlets includes a first and a second gas inlet, and wherein the plasma processing apparatus comprises:

a processing gas supply unit for supplying the processing gas for processing the target substrate;

a processing gas supply line for allowing the processing gas from the processing gas supply unit to flow therein;

a first and a second branch line branched from the processing gas supply line to be connected with the first and the second gas inlet, respectively;

a branch flow control unit for controlling branch flows of the processing gas distributed from the processing gas supply line to the first and the second branch line based on inner pressures of the first and the second branch line, respectively;

an additional gas supply unit for supplying an additional gas; and

an additional gas supply line, joining the first or the second branch line at a downstream side of the branch flow control unit, for allowing the additional gas from the additional gas supply unit to flow therein.