Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp

1. A flip-chip type semiconductor light-emitting device comprising:

a transparent substrate;

a semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are sequentially stacked on the transparent substrate;

a negative electrode bonded with the n-type semiconductor layer formed on the side opposite the transparent substrate side of the semiconductor layer;

a positive electrode formed on the side opposite the transparent substrate side of the semiconductor layer, bonded with the p-type semiconductor layer and larger in electrode area than the negative electrode; and

a positive electrode pad and a negative electrode pad, which are respectively connected to the positive electrode and the negative electrode,

wherein each of the electrode pads has the same shape as each other, when viewed from above, and

a recess penetrating the light-emitting layer and the p-type semiconductor layer to partially expose the n-type semiconductor layer is provided at a plurality of sites on the side opposite the transparent substrate side of the semiconductor layer, a plurality of the negative electrodes are individually bonded with the n-type semiconductor layer exposed from each of the recesses, a plurality of the positive electrodes are bonded with the p-type semiconductor layer adjacent to each of the recesses, each of the electrode pads is respectively formed across a forming region of the plurality of the negative electrodes and a forming region of the plurality of the positive electrodes, and a short-circuit preventing insulator film is provided respectively between adjacent ones of the positive electrode pad and the negative electrode and between adjacent ones of the negative electrode pad and the positive electrode.

2. A flip-chip type semiconductor light-emitting device according to claim 1 , wherein the short-circuit preventing insulator film is formed on all of the positive electrode, the negative electrode and the semiconductor layer, the insulator film is provided with an aperture for connecting the negative electrode with the negative electrode pad and also provided with another aperture for connecting the positive electrode to the positive electrode pad.

3. A flip-chip type semiconductor light-emitting device according to claim 1 , wherein soldering particles-containing soldering paste is coated respectively on the positive electrode pad and the negative electrode pad.

4. A flip-chip type semiconductor light-emitting device according to claim 1 , wherein a soldering film is included respectively in the positive electrode pad and the negative electrode pad.

5. A method for manufacturing a flip-chip type semiconductor light-emitting device as claimed in claim 1 , wherein with regard to a semiconductor light-emitting device comprising a transparent substrate, a semiconductor layer in which, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are sequentially stacked on the transparent substrate, a negative electrode formed on the side opposite the transparent substrate side of the semiconductor layer and bonded with the n-type semiconductor layer, and a positive electrode formed on the side opposite the transparent substrate side of the semiconductor layer, bonded with the p-type semiconductor layer and larger in electrode area than the negative electrode, a short-circuit preventing insulator film is formed at least partially on a forming region of the positive electrode,

a negative electrode pad is formed from a forming region of the negative electrode to a forming region of the insulator film, the negative electrode pad is connected to the negative electrode, and a positive electrode pad which is formed in the same shape as the negative electrode pad is connected to the positive electrode.

6. A method for manufacturing the flip-chip type semiconductor light-emitting device according to claim 5 , wherein a recess penetrating the light-emitting layer and the p-type semiconductor layer to partially expose the n-type semiconductor layer is provided on the side opposite the transparent substrate side of the semiconductor layer, the negative electrode is bonded with the thus exposed n-type semiconductor layer, the positive electrode is bonded with the p-type semiconductor layer, and

the positive electrode pad is formed at a remaining portion of the forming region of the positive electrode.

7. A method for manufacturing the flip-chip type semiconductor light-emitting device according to claim 5 , wherein a recess penetrating the light-emitting layer and the p-type semiconductor layer to partially expose the n-type semiconductor layer is provided at a plurality of sites on the side opposite the transparent substrate side of the semiconductor layer, a plurality of the negative electrodes are individually bonded with the n-type semiconductor layer exposed from each of the recesses, a plurality of the positive electrodes are bonded with the p-type semiconductor layer adjacent to each of the recesses,

the short-circuit preventing insulator film is formed on the semiconductor layer, a plurality of the positive electrodes and a plurality of the negative electrodes,

the insulator film is provided with a plurality of apertures to expose partially a plurality of the negative electrodes and a plurality of the positive electrode,

the positive electrode pad and the negative electrode pad are formed respectively across a forming region of a plurality of the negative electrodes and a forming region of a plurality of the positive electrodes, the positive electrode pad is connected to the positive electrode and the negative electrode is connected to the positive electrode respectively via the apertures, and the insulator film is used to insulate respectively a space between the positive electrode pad and the negative electrode and a space between the negative electrode pad and the positive electrode.

8. A mounting structure of a flip-chip type semiconductor light-emitting device which is provided with the flip-chip type semiconductor light-emitting device described in claim 1 and a printed circuit board having electrode patterns corresponding respectively to the positive electrode pad and the negative electrode pad of the flip-chip type semiconductor light-emitting device, wherein the positive electrode pad and the negative electrode pad are connected to each of the electrode patterns.

9. A mounting structure of the flip-chip type semiconductor light-emitting device according to claim 8 , wherein a plurality of the flip-chip type semiconductor light-emitting devices are connected in series.

10. A light-emitting diode lamp which is provided with the mounting structure described in claim 8 .

11. A method for mounting the flip-chip type semiconductor light-emitting device according to claim 4 , wherein flux paste is coated on each electrode pattern of the printed circuit board having electrode patterns corresponding respectively to the positive electrode pad and the negative electrode pad, the semiconductor light-emitting device is arranged on the printed circuit board in such a manner that the positive electrode pad and the negative electrode pad are superimposed respectively on the electrode patterns, and fixed temporarily by the flux paste, and re-flow is then effected to melt and solidify the soldering film, by which the positive electrode pad and the negative electrode pad are respectively bonded with the electrode patterns.

12. A method for mounting the flip-chip type semiconductor light-emitting device according to claim 11 , wherein a soldering film is formed on each of the electrode patterns, and the flux paste is coated on the soldering film.

13. A method for mounting the flip-chip type semiconductor light-emitting device according to claim 11 , wherein soldering particles are contained in the flux paste.

14. A mounting structure of the flip-chip type semiconductor light-emitting device which is provided with the flip-chip type semiconductor light-emitting device described in claim 4 and a printed circuit board having electrode patterns corresponding respectively to the positive electrode pad and the negative electrode pad of the semiconductor light-emitting device,

the semiconductor light-emitting device is arranged on the printed circuit board in such a manner that the positive electrode pad and the negative electrode pad are superimposed respectively on the electrode patterns, and the positive electrode pad and the negative electrode pad are respectively bonded with the electrode patterns via a soldering film formed by melting and solidifying the soldering film.

15. A printed circuit board on which the flip-chip type semiconductor light-emitting device described in claim 1 is packaged,

the printed circuit board for the flip-chip type semiconductor light-emitting device comprising a pair of electrode patterns to which each of the electrode pads is connected on mounting and a printed pattern connected to the electrode patterns, wherein a pair of the electrode patterns are formed in the same shape as each other when viewed from above.

16. A printed circuit board for the flip-chip type semiconductor light-emitting device described in claim 15 , wherein a plurality of printed patterns are connected to one of the above electrode patterns, a step portion for exposing the edge face of the printed pattern is provided at a connected portion of the electrode pattern with the printed pattern.

17. A printed circuit board for the flip-chip type semiconductor light-emitting device described in claim 16 , wherein a plurality of the printed patterns are formed approximately in a linear manner, and each of the printed patterns is drawn out from a pair of the electrode patterns in a mutually different direction.

18. A printed circuit board for the flip-chip type semiconductor light-emitting device according to claim 15 , wherein the printed pattern is formed approximately in a linear manner and the line width of the printed pattern is 500 μm or lower.