Nonvolatile memory cell including carbon storage element formed on a silicide layer
A nonvolatile memory cell includes a storage element, the storage element comprising a carbon material, a steering element located in series with the storage element, and a metal silicide layer located adjacent to the carbon material. A method of making a device includes forming a metal silicide over a silicon layer, forming a carbon layer over the metal silicide layer, forming a barrier layer over the carbon layer, and patterning the carbon layer, the metal silicide layer, and the silicon layer to form an array of pillars.
1. A nonvolatile memory cell, comprising:
a storage element, the storage element comprising a carbon material;
a steering element located in series with the storage element wherein the steering element comprises a p-i-n polysilicon diode; and
a metal silicide layer located adjacent to the carbon material.
2. The nonvolatile memory cell of claim 1 , wherein the metal silicide layer comprises at least one of titanium silicide, platinum silicide, cobalt silicide, tungsten silicide, or nickel silicide.
3. The nonvolatile memory cell of claim 1 , wherein the metal silicide layer comprises titanium silicide.
4. The nonvolatile memory cell of claim 1 , wherein the carbon material comprises at least one of carbon nanotube, amorphous carbon, polycrystalline carbon, graphene resistivity switching material, or a combination thereof.
5. The nonvolatile memory cell of claim 4 , wherein the carbon material comprises polycrystalline carbon, amorphous carbon, or a combination thereof.
6. The nonvolatile memory cell of claim 1 , wherein the nonvolatile memory cell is a read/write memory cell or a rewritable memory cell.
7. The nonvolatile memory cell of claim 1 , wherein the nonvolatile memory cell is located in a monolithic three dimensional array of memory cells.
8. The nonvolatile memory cell of claim 1 , wherein:
the nonvolatile memory cell further comprises a bottom electrode located underneath the steering element and an upper electrode located over the storage element;
the steering element comprises a cylindrical pillar diode;
the storage element comprises a carbon layer having a substantial cylindrical pillar shape; and
the metal silicide layer has a substantial cylindrical pillar shape and is located between the steering element and the storage element.
9. The nonvolatile memory cell of claim 8 , wherein the cylindrical pillar diode, the carbon layer, and the metal silicide layer have a substantially same diameter.
10. A nonvolatile memory cell, comprising:
a storage element, the storage element comprising a carbon material, wherein the carbon material comprises polycrystalline carbon, amorphous carbon, or a combination thereof;
a steering element located in series with the storage element; and
a metal silicide layer located adjacent to the carbon material.
11. The nonvolatile memory cell of claim 10 , wherein the carbon material comprises amorphous carbon.
12. The nonvolatile memory cell of claim 10 , wherein the carbon material comprises polycrystalline carbon.
13. The nonvolatile memory cell of claim 10 , wherein the metal silicide layer comprises at least one of titanium silicide, platinum silicide, cobalt silicide, tungsten silicide, or nickel silicide.
14. The nonvolatile memory cell of claim 10 , wherein the metal silicide layer comprises titanium silicide.
15. The nonvolatile memory cell of claim 10 , wherein the steering element comprises a diode or a transistor.
16. The nonvolatile memory cell of claim 14 , wherein the steering element comprises a p-i-n polysilicon diode.
17. The nonvolatile memory cell of claim 10 , wherein the nonvolatile memory cell is a read/write memory cell or a rewritable memory cell.
18. The nonvolatile memory cell of claim 10 , wherein the nonvolatile memory cell is located in a monolithic three dimensional array of memory cells.
19. A nonvolatile memory cell, comprising:
a storage element, the storage element comprising a carbon material;
a steering element located in series with the storage element; and
a metal silicide layer located adjacent to the carbon material,
wherein the nonvolatile memory cell is located in a monolithic three dimensional array of memory cells.
20. The nonvolatile memory cell of claim 19 , wherein the metal silicide layer comprises at least one of titanium silicide, platinum silicide, cobalt silicide, tungsten silicide, or nickel silicide.
21. The nonvolatile memory cell of claim 19 , wherein the metal silicide layer comprises titanium silicide.
22. The nonvolatile memory cell of claim 19 , wherein the steering element comprises a diode or a transistor.
23. The nonvolatile memory cell of claim 22 , wherein the steering element comprises a p-i-n polysilicon diode.
24. The nonvolatile memory cell of claim 19 , wherein the carbon material comprises at least one of carbon nanotube, amorphous carbon, polycrystalline carbon, graphene resistivity switching material, or a combination thereof.
25. The nonvolatile memory cell of claim 24 , wherein the carbon material comprises polycrystalline carbon, amorphous carbon, or a combination thereof.
26. The nonvolatile memory cell of claim 19 , wherein the nonvolatile memory cell is a read/write memory cell or a rewritable memory cell.