Method of fabricating metal interconnection and method of fabricating image sensor using the same
A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
1. A method of fabricating a metal interconnection, comprising:
forming a interlayer dielectric layer on a substrate;
forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching; and
forming a metal interconnection in the interconnection formation region.
2. The method of claim 1 , wherein the UV treatment is performed multiple times.
3. The method of claim 1 , wherein the interconnection formation region includes at least one selected from the group consisting of a single damascene interconnection formation region, a dual damascene interconnection formation region, a contact hole, and a via hole.
4. The method of claim 1 , wherein the metal interconnection is a copper interconnection.
5. A method of fabricating an image sensor, comprising:
forming a photoelectric transformation device on a substrate;
forming an interlayer dielectric layer on the substrate which the photoelectric transformation device is formed on;
forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching; and
forming a metal interconnection in the interconnection formation region.
6. The method of claim 5 , wherein the UV treatment is performed multiple times.
7. The method of claim 5 , wherein the interconnection formation region includes at least one selected from the group consisting of a single damascene interconnection formation region, a dual damascene interconnection formation region, a contact hole, and a via hole.
8. The method of claim 5 , wherein the metal interconnection is a copper interconnection.
9. A method of fabricating a metal interconnection, comprising:
forming a interlayer dielectric layer on a substrate;
forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
performing an ultraviolet (UV) treatment multiple times on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching; and
forming a metal interconnection in the interconnection formation region after the UV treatment has been performed the multiple times on the substrate.
10. The method of claim 9 , wherein the interconnection formation region includes at least one selected from the group consisting of a single damascene interconnection formation region, a dual damascene interconnection formation region, a contact hole, and a via hole.
11. The method of claim 9 , wherein the metal interconnection is a copper interconnection.