Microelectronic package and method of manufacturing same
A microelectronic package includes a first substrate ( 120 ) having a first surface area ( 125 ) and a second substrate ( 130 ) having a second surface area ( 135 ). The first substrate includes a first set of interconnects ( 126 ) having a first pitch ( 127 ) at a first surface ( 121 ) and a second set of interconnects ( 128 ) having a second pitch ( 129 ) at a second surface ( 222 ). The second substrate is coupled to the first substrate using the second set of interconnects and includes a third set of interconnects ( 236 ) having a third pitch ( 237 ) and internal electrically conductive layers ( 233, 234 ) connected to each other with a microvia ( 240 ). The first pitch is smaller than the second pitch, the second pitch is smaller than the third pitch, and the first surface area is smaller than the second surface area.
1. A microelectronic package comprising:
a first substrate having a first surface area and containing a first plurality of electrically conductive traces, where adjacent ones of the first plurality of electrically conductive traces are separated by a first space, the first substrate comprising a first set of interconnects having a first pitch at a first surface thereof and a second set of interconnects having a second pitch at a second surface thereof; and
a second substrate having a second surface area and containing a second plurality of electrically conductive traces, where adjacent ones of the second plurality of electrically conductive traces are separated by a second space that is larger than the first space, the second substrate coupled to the first substrate using the second set of interconnects and comprising:
a third set of interconnects having a third pitch; and
first and second internal electrically conductive layers that are connected to each other with a microvia,
wherein:
the first pitch is smaller than the second pitch;
the second pitch is smaller than the third pitch; and
the first surface area is smaller than the second surface area.
2. The microelectronic package of claim 1 wherein:
the first substrate contains a plurality of through holes having a diameter that is no greater than 200 micrometers; and
the first plurality of electrically conductive traces each have a thickness no greater than 15 micrometers and the first space is no greater than 15 micrometers.
3. The microelectronic package of claim 1 wherein:
the second plurality of electrically conductive traces each have a thickness no greater than 75 micrometers and the second space is no greater than 75 micrometers.
4. The microelectronic package of claim 1 further comprising:
an integrated passive device located in at least one of the first substrate and the second substrate.
5. The microelectronic package of claim 1 wherein:
the first substrate is a coreless substrate.
6. The microelectronic package of claim 1 wherein:
the first substrate comprises a core having a thickness that is no greater than 400 micrometers.
7. A microelectronic package comprising:
a microelectronic die;
a first substrate having a first surface area and containing a first plurality of electrically conductive traces, where adjacent ones of the first plurality of electrically conductive traces are separated by a first space, the first substrate comprising a first set of interconnects having a first pitch at a first surface thereof and a second set of interconnects having a second pitch at a second surface thereof; and
a second substrate having a second surface area and containing a second plurality of electrically conductive traces, where adjacent ones of the second plurality of electrically conductive traces are separated by a second space that is larger than the first space, the second substrate coupled to the first substrate using the second set of interconnects and comprising:
a third set of interconnects having a third pitch; and
first and second internal electrically conductive layers that are connected to each other with a microvia,
wherein:
the first pitch is smaller than the second pitch;
the second pitch is smaller than the third pitch;
the first substrate is coupled to the microelectronic die using the first set of interconnects; and
the first surface area is smaller than the second surface area.
8. The microelectronic package of claim 7 further comprising:
an integrated passive device located in at least one of the first substrate and the second substrate.
9. The microelectronic package of claim 8 wherein:
the first substrate is a coreless substrate.
10. The microelectronic package of claim 8 wherein:
the first substrate comprises a core having a thickness that is no greater than 400 micrometers.
11. The microelectronic package of claim 7 wherein:
the first substrate has a thickness that is no greater than 400 micrometers;
the first substrate contains a plurality of through holes having a diameter that is no greater than 200 micrometers; and
the first plurality of electrically conductive traces each have a thickness that is no greater than 15 micrometers and the first space is no greater than 15 micrometers.
12. The microelectronic package of claim 11 wherein:
the second plurality of electrically conductive traces each have a thickness no greater than 75 micrometers and the second space is no greater than 75 micrometers.