Semiconductor device and method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

preparing a semiconductor substrate formed with an electrode pad on a main surface side;

forming a first insulating layer from an insulating material so as to cover main surfaces of the electrode pad and the semiconductor substrate;

forming a first opening in the first insulating layer such that a portion of the electrode pad is exposed;

forming a first electrically conductive layer containing a first electrically conductive material so as to cover the electrode pad and the first insulating layer;

forming a first resist film on the first electrically conductive layer except in a portion where a first redistribution layer is to be formed;

forming the first redistribution layer from the first electrically conductive material on the first electrically conductive layer, by growing the first electrically conductive material contained in the first electrically conductive layer using an electroplating method, and removing the first resist film;

forming a second insulating layer from an insulating material so as to cover the first redistribution layer and the first insulating layer;

forming a second opening in the second insulating layer such that a portion of the first redistribution layer is exposed;

forming a second electrically conductive layer containing a second electrically conductive material so as to cover the first redistribution layer and the second insulating layer;

forming a second resist film on the second electrically conductive layer except in a portion where a second redistribution layer is to be formed;

forming the second redistribution layer from the second electrically conductive material on the second electrically conductive layer, by growing the second electrically conductive material contained in the second electrically conductive layer using an electroplating method, and removing the second resist film; and

performing at least one of:

processing, when forming the first redistribution layer, to form a first electrically conductive material layer by growing the first electrically conductive material using electroplating, and polishing the first resist film and the first electrically conductive material layer from the main surface side to flatten their surfaces; and

processing, when forming the second redistribution layer, to form a second electrically conductive material layer by growing the second electrically conductive material using electroplating, and polishing the second resist film and the second electrically conductive material layer from the main surface side to flatten their surfaces.

2. The method of claim 1 , wherein the first opening and the second opening are formed such that a via portion of the second redistribution layer formed above the first redistribution layer is superimposed in a stacking direction on a via portion of the first redistribution layer formed above the electrode pad, so as to form a stacked structure.

3. The method of claim 1 , wherein at least one of the first electrically conductive material layer and the second electrically conductive material layer is polished from the main surface side to flatten the surface thereof, and at least one of the first insulating layer and the second insulating layer is polished from the main surface side to flatten the surface thereof.

4. The method of claim 1 , wherein polishing is performed by a grinder.

5. The method of claim 1 , wherein:

the processing for forming the first redistribution layer is performed so that when the first resist film and the first electrically conductive material layer are polished from the main surface side to flatten the surfaces thereof, the first resist film is removed after the surfaces have been flattened; and

the processing for forming the second redistribution layer is performed so that when the second resist film and the second electrically conductive material layer are polished from the main surface side to flatten the surfaces thereof, the second resist film is removed after the surfaces have been flattened.

6. The method of claim 1 , wherein polishing is performed across the entire main surface of the semiconductor substrate.

7. The method of claim 1 , wherein:

the processing for forming the first redistribution layer is performed so that when the first resist film and the first electrically conductive material layer are polished from the main surface side to flatten the surfaces thereof, the first electrically conductive material layer is formed by growing the first electrically conductive material using electroplating so as not to exceed a height of the first resist film, and the first resist film is removed after the first electrically conductive material layer has been polished; and

the processing for forming the second redistribution layer is performed so that when the second resist film and the second electrically conductive material layer are polished from the main surface side to flatten the surfaces thereof, the second electrically conductive material layer is formed by growing the second electrically conductive material using electroplating so as not to exceed a height of the second resist film, and the second resist film is removed after the second electrically conductive material layer has been polished.

8. A method of manufacturing a semiconductor device, the method comprising:

preparing a semiconductor substrate formed, on a main surface side, with a first redistribution layer, and a first insulating layer provided with a first opening exposing a portion of the first redistribution layer;

forming a first electrically conductive layer containing a first electrically conductive material so as to cover the first redistribution layer and the first insulating layer;

forming a first resist film on the first electrically conductive layer except in a portion where a second redistribution layer is to be formed;

forming the second redistribution layer from the first electrically conductive material on the first electrically conductive layer, by growing the first electrically conductive material contained in the first electrically conductive layer using an electroplating method, and removing the first resist film;

forming a second insulating layer from an insulating material so as to cover the second redistribution layer and the first insulating layer;

forming a second opening in the second insulating layer such that a portion of the second redistribution layer is exposed;

forming a second electrically conductive layer containing a second electrically conductive material so as to cover the second redistribution layer and the second insulating layer;

forming a second resist film on the second electrically conductive layer except in a portion where a third redistribution layer is to be formed;

forming the third redistribution layer from the second electrically conductive material on the second electrically conductive layer, by growing the second electrically conductive material contained in the second electrically conductive layer using an electroplating method, and removing the second resist film; and

performing at least one of:

processing, when forming the second redistribution layer, to form a first electrically conductive material layer by growing the first electrically conductive material using electroplating, and polishing the first resist film and the first electrically conductive material layer from the main surface side to flatten their surfaces; and

processing, when forming the third redistribution layer, to form a second electrically conductive material layer by growing the second electrically conductive material using electroplating, and polishing the second resist film and the second electrically conductive material layer from the main surface side to flatten their surfaces.