IP Library Granted Patent US 8,083,857
Granted Patent B2
US 8,083,857 · App. 12/213,011 · Granted Dec 27, 2011

Substrate cleaning method and substrate cleaning apparatus

Assignee: Tokyo Electron Limited
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Quick Facts
Patent No.
US 8,083,857
App. No.
12/213,011
Granted
Dec 27, 2011
Kind
B2
Abstract

The present invention provides a substrate cleaning method capable of reducing non-uniformity of a removal efficiency of particles between lots with a simple procedure. The substrate cleaning method comprises: a step of supplying a gas into a cleaning tank, while an irradiation of ultrasonic waves to the cleaning liquid in the cleaning tank is being stopped, so as to increase a dissolved gas concentration of the gas dissolved in the cleaning liquid in the cleaning tank to a saturated concentration; and a step of irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to clean a substrate immersed in the cleaning liquid in the cleaning tank. In the step of increasing the dissolved gas concentration to the saturated concentration, the gas is supplied to the cleaning tank so as to increase the dissolved gas concentration of the cleaning liquid in the cleaning tank to the saturated concentration. In addition, in the step of increasing the dissolved gas concentration to the saturated concentration, the irradiation of the ultrasonic waves to the cleaning liquid in the cleaning tank is stopped.

Claims (32)

1. A substrate cleaning method comprising:

a step of supplying a cleaning liquid into a cleaning tank and filling the cleaning tank with the cleaning liquid;

a step of supplying a gas, by performing bubbling, into the cleaning tank, while an irradiation of ultrasonic waves to the cleaning liquid in the cleaning tank is being stopped, so as to increase a dissolved gas concentration of the gas dissolved in the cleaning liquid in the cleaning tank to a saturated concentration;

a step of irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to adjust the dissolved gas concentration of the cleaning liquid in the cleaning tank;

a step of immersing the substrate into the cleaning liquid in the cleaning tank, and

a step of irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to clean a substrate immersed in the cleaning liquid in the cleaning tank,

wherein the steps are performed in the above order.

2. The substrate cleaning method according to claim 1 , wherein

a step of increasing the dissolved gas concentration to the saturated concentration is performed after the substrate that has been cleaned at the step of cleaning the substrate is taken out from the cleaning liquid in the cleaning tank.

3. The substrate cleaning method according to claim 2 , further comprising a step of, before a substrate to be successively processed is immersed into the cleaning liquid in the cleaning tank, irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to adjust the dissolved gas concentration of the cleaning liquid in the cleaning tank.

4. The substrate cleaning method according to claim 1 , wherein

the step of cleaning the substrate is performed at least twice so as to at least include a first step of cleaning the substrate performed before the step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration and a second step of cleaning the substrate performed after the step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration.

5. The substrate cleaning method according to claim 1 , wherein:

the step of cleaning the substrate is performed at least twice so as to at least include a first step of cleaning the substrate and a second step of cleaning the substrate;

the step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration is performed at least twice so as to at least include a first step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration and a second step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration; and

one of the first step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration and the second step of increasing the dissolved gas concentration of the cleaning liquid to the saturated concentration is performed between the first step of cleaning the substrate and the second step of cleaning the substrate.

6. The substrate cleaning method according to claim 1 , further comprising a step of, before a substrate to be successively processed is delivered into the cleaning tank, replacing the cleaning liquid in the cleaning tank with a new one.

7. The substrate cleaning method according to claim 1 , wherein

in the step of cleaning the substrate, the cleaning liquid overflowing from the cleaning tank is circulated and supplied into the cleaning tank.

8. The substrate cleaning method according to claim 1 , wherein

in the step of cleaning the substrate, the supply of the cleaning liquid into the cleaning tank is stopped.

9. The substrate cleaning method according to claim 1 , further comprising a step of adjusting a temperature of the cleaning liquid in the cleaning tank.

10. A non-transitory storage medium storing a program to be executed by a control device that controls a substrate cleaning apparatus, the storage medium causing the substrate cleaning apparatus to accomplish a cleaning method for a substrate to be processed according to claim 1 when the program is executed by the control device.

11. A substrate cleaning method comprising:

a step of supplying a cleaning liquid into a cleaning tank and filling the cleaning tank with the cleaning liquid;

a step of supplying a gas while no irradiation of ultrasonic waves to the cleaning liquid in the cleaning tank occurs, so as to increase a dissolved gas concentration of the gas dissolved in the cleaning liquid in the cleaning tank to a saturated concentration, wherein the gas is supplied into the cleaning liquid flowing toward the cleaning tank, and is supplied together with the cleaning liquid into the cleaning tank;

a step of irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to adjust the dissolved gas concentration of the cleaning liquid in the cleaning tank;

a step of immersing the substrate into the cleaning liquid in the cleaning tank; and

a step of irradiating ultrasonic waves to the cleaning liquid in the cleaning tank so as to clean a substrate immersed in the cleaning liquid in the cleaning tank,

wherein the steps are performed in the above order.

12. The substrate cleaning method according to claim 11 , wherein

the gas is supplied into the cleaning liquid that has overflown from the cleaning tank and is then circulated and again supplied into the cleaning tank.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 12, 2008
From: WATANABE, TSUKASA; SHINDO, NAOKI; ESHIMA, KAZUYOSHI
To: TOKYO ELECTRON LIMITED
Reel/Frame 021154/0021 →
Priority Claims (2)
JP 2007-158992 · Jun 15, 2007 · national
JP 2007-340412 · Dec 28, 2007 · national
Continuity (1)
Related Publication 20080308120A1 · Dec 18, 2008