Method of manufacturing semiconductor device
View Patent ↗To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to thereby form a fragile layer in the bonding substrate. Then, a region of the bonding substrate that is on and near the surface thereof, i.e., a region ranging from a shallower position than the fragile layer to the surface is removed by etching, polishing, or the like. Next, after attaching the bonding substrate to a base substrate, the bonding substrate is separated at the fragile layer to thereby form a semiconductor film over the base substrate. After forming the semiconductor film over the base substrate, a semiconductor element is formed using the semiconductor film.
1. A method of manufacturing a semiconductor device comprising:
forming a fragile layer in a semiconductor substrate by adding ions to the semiconductor substrate;
removing a region of the semiconductor substrate, the region ranging from a shallower position than the fragile layer to a surface of the semiconductor substrate; and
attaching the semiconductor substrate to a base substrate and then separating the semiconductor substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate.
2. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor substrate is a single crystal silicon substrate.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein the ions are added to the semiconductor substrate by an ion doping method.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein the removing step is performed by etching or polishing.
5. The method of manufacturing a semiconductor device according to claim 1 , wherein the removed region of the semiconductor substrate is 1 nm to 5 nm.
6. A method of manufacturing a semiconductor device comprising:
forming a fragile layer in a semiconductor substrate by adding ions to the semiconductor substrate;
removing a region of the semiconductor substrate, the region ranging from a shallower position than the fragile layer to a surface of the semiconductor substrate;
forming one or more insulating films over a surface of the semiconductor substrate that is exposed by the removing step; and
attaching the semiconductor substrate to a base substrate with the one or more insulating films interposed therebetween and then separating the semiconductor substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate.
7. The method of manufacturing a semiconductor device according to claim 6 , wherein the semiconductor substrate is a single crystal silicon substrate.
8. The method of manufacturing a semiconductor device according to claim 6 , wherein the ions are added to the semiconductor substrate by an ion doping method.
9. The method of manufacturing a semiconductor device according to claim 6 , wherein the removing step is performed by etching or polishing.
10. The method of manufacturing a semiconductor device according to claim 6 , wherein the removed region of the semiconductor substrate is 1 nm to 5 nm.
11. A method of manufacturing a semiconductor device comprising:
forming an insulating film over a bonding substrate;
forming a fragile layer in the bonding substrate by adding ions to the bonding substrate through the insulating film;
removing a region of the insulating film after forming the fragile layer, the region ranging from a surface of the insulating film to a predetermined depth;
attaching the insulating film directly to a base substrate after removing the region of the insulating film and then separating the bonding substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate.
12. The method of manufacturing a semiconductor device according to claim 11 , wherein the bonding substrate is a single crystal silicon substrate.
13. The method of manufacturing a semiconductor device according to claim 11 , wherein the ions are added to the bonding substrate by an ion doping method.
14. The method of manufacturing a semiconductor device according to claim 11 , wherein the removing step is performed by etching or polishing.
15. The method of manufacturing a semiconductor device according to claim 11 , wherein the removed region of the insulating film is 1 nm to 5 nm.
16. A method of manufacturing a semiconductor device comprising:
forming a first insulating film over a bonding substrate;
forming a fragile layer in the bonding substrate by adding ions to the bonding substrate through the first insulating film;
removing a region of the first insulating film after forming the fragile layer, the region ranging from a surface of the first insulating film to a predetermined depth;
forming a second insulating film by a chemical vapor reaction over a surface of the first insulating film that is exposed by the removing step; and
attaching the bonding substrate to a base substrate with the first insulating film and the second insulating film interposed therebetween and then separating the bonding substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate.
17. The method of manufacturing a semiconductor device according to claim 16 , wherein the bonding substrate is a single crystal silicon substrate.
18. The method of manufacturing a semiconductor device according to claim 16 , wherein the ions are added to the bonding substrate by an ion doping method.
19. The method of manufacturing a semiconductor device according to claim 16 , wherein the removing step is performed by etching or polishing.
20. The method of manufacturing a semiconductor device according to claim 16 , wherein the removed region of the first insulating film is 1 nm to 5 nm.