Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound

1. A resist composition comprising:

(A) a compound represented by the following formula (I):

wherein

each of R 1 to R 13 independently represents a hydrogen atom or a substituent, provided that at least one of R 1 to R 13 is a substituent containing an alcoholic hydroxyl group;

Z represents a single bond or a divalent linking group; and

X represents an anion containing a proton acceptor functional group.

2. The resist composition according to claim 1 , further comprising:

(B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution.

3. The resist composition according to claim 2 , wherein

the resin (B) is a resin having a hydroxystyrene repeating unit.

4. The resist composition according to claim 1 , which is exposed with X-ray, electron beam or EUV.

5. A pattern-forming method comprising:

forming a resist film with the resist composition according to claim 1 , exposing the resist film, and

developing the resist film.

6. A compound represented by the following formula (I):

wherein

each of R 1 to R 13 independently represents a hydrogen atom or a substituent, provided that at least one of R 1 to R 13 represents a substituent containing an alcoholic hydroxyl group;

Z represents a single bond or a divalent linking group; and

X − represents an anion containing a proton acceptor functional group.

7. A resist composition according to claim 1 , wherein Z represents a single bond or a non-electron-withdrawing divalent linking group.

8. A resist composition according to claim 1 , wherein Z represents a single bond.

9. A resist composition according to claim 1 , wherein X − in formula (I) is an anion represented by the formula (III)

wherein each of R 1 and R 2 independently represents a univalent organic group, or R 1 and R 2 combine with each other to form a ring.