Die backside metallization and surface activated bonding for stacked die packages
Methods and apparatus to provide die backside metallization and/or surface activated bonding for stacked die packages are described. In one embodiment, an active metal layer of a first die may be coupled to an active metal layer of a second die through silicon vias and/or a die backside metallization layer of the second die. Other embodiments are also described.
1. An apparatus comprising:
a first die having an active metal layer;
a second die having a die backside metallization layer that is electrically coupled to the active metal layer of the first die; and
at least one silicon via, coupled between an active metal layer of the second die to the die backside metallization layer of the second die, to electrically couple the active metal layer of the first die to the active metal layer of the second die through the die backside metallization layer,
wherein a molding compound is to couple the first die and the second die, the molding compound to encapsulate the first and second dies and wherein the molding compound is to comprise one or more of: organic cylinders, plastic mold, or plastic mold with particles or fiber.
2. The apparatus of claim 1 , wherein the first die and the second die are coupled through a surface activated bonding layer.
3. The apparatus of claim 1 , further comprising a substrate that is coupled to an active metal layer of the second die.
4. The apparatus of claim 1 , wherein the die backside metallization layer of the second die comprises one or more surface pads.
5. The apparatus of claim 4 , further comprising one or more traces to at least couple some of the surface pads and corresponding openings across a surface of the second die.
6. The apparatus of claim 1 , wherein the molding compound is to couple the first die, the second die, and a package substrate.
7. The apparatus of claim 1 , wherein at least one of the first die or the second die comprises one or more of: a processor, a memory device, a network communication device, or a chipset.
8. The apparatus of claim 7 , wherein the processor comprises one or more processor cores.
9. A method comprising:
metallizing a backside of a first die;
stacking a second die on the first die;
coupling an active metal layer of the second die and the metallized backside of the first die;
providing a molding compound to couple the first die and the second die, wherein the molding compound is to encapsulate the first and second dies, wherein the molding compound is to comprise one or more of: organic cylinders, plastic mold, or plastic mold with particles or fiber; and
coupling the metallized backside of the first die to one or more through silicon vias, wherein the one or more through silicon vias are to be coupled between a first portion of the first die and a second portion of the first die.
10. The method of claim 9 , further comprising coupling the first or second die to a package substrate.
11. The method of claim 9 , further comprising stacking a plurality of dies on the first die.
12. The method of claim 9 , wherein the first portion of the first die is to comprise an active metal layer.
13. The method of claim 9 , wherein the second portion of the first die is to comprise a die backside metallization layer of the first die.
14. A stacked integrated circuit package comprising:
a first die having an active metal layer;
a second die having a die backside metallization layer that is electrically coupled to the active metal layer of the first die; and
at least one silicon via, coupled between a first portion and a second portion of the second die, to electrically couple the active metal layer of the first die to the active metal layer of the second die through the die backside metallization layer; and
a molding compound to couple the first die and the second die, the molding compound to encapsulate the first and second dies, wherein the molding compound is to comprise one or more of: organic cylinders, plastic mold, or plastic mold with particles or fiber.
15. The package of claim 14 , wherein the first portion is to comprise an active metal layer of the second die.
16. The package of claim 14 , wherein the second portion is to comprise a backside metallization layer of the second die.
17. The package of claim 14 , wherein the first die and the second die are coupled through a surface activated bonding layer.
18. The package of claim 14 , further comprising a substrate that is coupled to an active metal layer of the second die.
19. The package of claim 14 , wherein at least one of the first die or the second die is to comprise one or more of: a processor, a memory device, a network communication device, or a chipset.