Method and apparatus for performing model-based OPC for pattern decomposed features
A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
1. A method for decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, comprising the steps of:
separating said features to be printed into a first pattern and a second pattern;
performing a first optical proximity correction process on said first pattern and said second pattern;
determining an imaging performance of said first pattern and said second pattern;
determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;
utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;
utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and
applying a second optical proximity correction process to said modified first pattern and said modified second pattern.
2. A method for decomposing a target circuit pattern according to claim 1 , wherein said features are separated into said first pattern and said second pattern utilizing a rule-based decomposition process.
3. A method for decomposing a target circuit pattern according to claim 1 , wherein said features are separated into said first pattern and said second pattern utilizing a model-based decomposition process.
4. A method for decomposing a target circuit pattern according to claim 1 , wherein said first optical proximity correction process and said second optical proximity correction process are the same processes.
5. A method for decomposing a target circuit pattern according to claim 4 , wherein said first optical proximity correction process and said second optical proximity correction utilizes a rule-based correction process.
6. A method for decomposing a target circuit pattern according to claim 4 , wherein said first optical proximity correction process and said second optical proximity correction utilize a model-based correction process.
7. A method for decomposing a target circuit pattern according to claim 1 , wherein said first error and said second error are determined in said stitching areas associated with said first pattern and said second pattern.
8. A computer readable storage medium storing a computer program for decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, when executed, causing a computer to perform the steps of:
separating said features to be printed into a first pattern and a second pattern;
performing a first optical proximity correction process on said first pattern and said second pattern;
determining an imaging performance of said first pattern and said second pattern;
determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;
utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;
utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and
applying a second optical proximity correction process to said modified first pattern and said modified second pattern.
9. The computer readable storage medium according to claim 8 , wherein said features are separated into said first pattern and said second pattern utilizing a rule-based decomposition process.
10. The computer readable storage medium according to claim 8 , wherein said features are separated into said first pattern and said second pattern utilizing a model-based decomposition process.
11. The computer readable storage medium according to claim 8 , wherein said first optical proximity correction process and said second optical proximity correction process are the same processes.
12. The computer readable storage medium according to claim 11 , wherein said first optical proximity correction process and said second optical proximity correction utilizes a rule-based correction process.
13. The computer readable storage medium according to claim 11 , wherein said first optical proximity correction process and said second optical proximity correction utilize a model-based correction process.
14. The computer readable storage medium according to claim 8 , wherein said first error and said second error are determined in said stitching areas associated with said first pattern and said second pattern.
15. A device manufacturing method comprising the steps of:
(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
(b) providing a projection beam of radiation using an imaging system;
(c) using patterns on masks to endow the projection beam with patterns in its cross-section;
(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,
wherein in step (c), providing a pattern on a mask includes the steps of:
separating features to be printed into a first pattern and a second pattern;
performing a first optical proximity correction process on said first pattern and said second pattern;
determining an imaging performance of said first pattern and said second pattern;
determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;
utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;
utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern; and
applying a second optical proximity correction process to said modified first pattern and said modified second pattern.
16. A method for generating masks to be utilized in a photolithography process, said method comprising the steps of:
decomposing a target circuit pattern containing features to be printed on a wafer, into multiple patterns, by separating said features to be printed into a first pattern and a second pattern;
performing a first optical proximity correction process on said first pattern and said second pattern;
determining an imaging performance of said first pattern and said second pattern;
determining a first error between said first pattern and said imaging performance of said first pattern, and a second error between said second pattern and said imaging performance of said second pattern;
utilizing said first error to adjust stitching areas associated with said first pattern to generate a modified first pattern;
utilizing said second error to adjust stitching areas associated with said second pattern to generate a modified second pattern;
applying a second optical proximity correction process to said modified first pattern and said modified second pattern; and
generating a first mask corresponding to said modified first pattern after said second optical proximity correction process, and a second mask corresponding to said modified second pattern after said second optical proximity correction process.