Semiconductor package and method using isolated V
Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate which can have an integrated circuit die attached thereto. The package includes a dedicated high-speed ground plane that is electrically isolated from the ground plane used to ground the low speed circuitry of the package.
1. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a die attachment area and having a first ground plane arranged thereon wherein the die attachment area has a die attached thereto, with the die having high speed circuitry and low speed circuitry,
the low speed circuitry of the die is electrically connected exclusively with the first ground plane and a first set of I/O contacts that are separated from each other by a first spacing distance, and
the high speed circuitry of the die is electrically connected exclusively with second ground plane and the second set of I/O contacts that are separated from each other by a second spacing distance;
a plurality of electrical connections that electrically connect the first ground plane with electrical contacts that are to be connected with an external ground;
a second ground plane that is spatially separated and electrically isolated from the first ground plane, wherein the high speed circuitry of the die is electrically connected exclusively with second ground plane and the second set of I/O contacts;
a plurality of additional electrical connections that electrically connect the second ground plane with electrical contacts that are to be connected with an external ground;
electrical I/O contacts connected with the die and enabling electrical connection of the package with external circuitry wherein the I/O contacts comprise:
the first set of I/O contacts spaced and configured for electrical connection with low speed electronic circuitry; and
the second set of I/O contacts spaced and configured for electrical connection with high speed electronic circuitry; and
wherein the substrate includes a plurality of layers, and wherein;
a first layer of the substrate includes,
the first ground plane, and
the second ground plane;
a second layer of the substrate includes,
a third ground plane configured for electrical connection with low speed electronic circuitry, and
a fourth ground plane that is spatially separated and electrically isolated from the third ground plane, the third ground plane configured for electrical connection with high speed electronic circuitry; and
at least one reference plane associated with each layer of the substrate and the ground planes included thereon; and
wherein the first spacing distance includes a first dielectric material between the contacts of the first set of I/O contacts and the second spacing distance includes a second dielectric material between the contacts of the second set of I/O contacts, wherein the first dielectric material establishes the first differential impedance and wherein the second dielectric material establishes the second differential impedance, wherein the second differential impedance is greater than the first differential impedance.
2. A semiconductor integrated circuit (IC) package which comprises:
a substrate having a die attachment area and having a first ground plane arranged thereon wherein the die attachment area has a die attached thereto, with the die having high speed circuitry and low speed circuitry,
the low speed circuitry of the die is electrically connected exclusively with the first ground plane and a first set of I/O contacts wherein the first set of I/O contacts has a first spacing distance that separates the contacts of the first set of I/O contacts such that the first spacing distance includes a first dielectric material between the contacts of the first set of I/O contacts wherein the first spacing distance and the first dielectric material establish a first differential impedance; and
the high speed circuitry of the die is electrically connected exclusively with second ground plane and the second set of I/O contacts wherein the second set of I/O contacts has a second spacing distance that separates the contacts of the second set of I/O contacts which includes a second dielectric material between the contacts of the second set of I/O contacts wherein the second spacing distance and the second dielectric material establish a second differential impedance such that the second differential impedance is greater than the first differential impedance;
a plurality of electrical connections that electrically connect the first ground plane with electrical contacts that are to be connected with an external ground;
a second ground plane that is spatially separated and electrically isolated from the first ground plane, wherein the high speed circuitry of the die is electrically connected exclusively with second ground plane and the second set of I/O contacts;
a plurality of additional electrical connections that electrically connect the second ground plane with electrical contacts that are to be connected with an external ground;
electrical I/O contacts connected with the die and enabling electrical connection of the package with external circuitry wherein the I/O contacts comprise:
the first set of I/O contacts spaced and configured for electrical connection with low speed electronic circuitry; and
the second set of I/O contacts spaced and configured for electrical connection with high speed electronic circuitry; and
wherein the substrate includes a plurality of layers, and wherein;
a first layer of the substrate includes,
the first ground plane, and
the second ground plane;
a second layer of the substrate includes,
a third ground plane configured for electrical connection with low speed electronic circuitry, and
a fourth ground plane that is spatially separated and electrically isolated from the third ground plane, the third ground plane configured for electrical connection with high speed electronic circuitry; and
at least one reference plane associated with each layer of the substrate and the ground planes included thereon.
3. The IC package as recited in claim 2 wherein the first set of I/O contacts has a greater contact density than the second set of I/O contacts.
4. An IC package as recited in claim 2 wherein the second spacing distance between the second set of I/O contacts are spaced apart at a distance sufficient to establish a differential impedance of at least 100 ohms (Ω) between the I/O contacts of the second set.
5. An IC package as recited in claim 2 wherein,
the first spacing distance between the contacts of the first set of first set of I/O contacts is sufficient to establish a control differential impedance effective to substantially eliminate cross-talk between the first set of I/O contacts for the low speed electronic circuitry; and
the second spacing distance between the contacts of the second set of I/O contacts is sufficient to establish a control differential impedance effective to substantially eliminate cross-talk between I/O contacts for the high speed electronic circuitry.
6. An IC package as recited in claim 2 wherein the low speed electronic circuitry is defined as circuitry having serial transfer rates of less than about 1 Gb/s; and
wherein the high speed electronic circuitry is defined as circuitry having serial transfer rates of greater than about 1 Gb/s.
7. An IC package as recited in claim 6 wherein the package is configured as a ball grid array package.
8. A semiconductor operating configuration comprising:
a mother board having two ground systems including a first low speed ground system arranged for connection with a low speed ground plane of an IC (integrated circuit) package and a second high speed ground system electrically isolated from the first system arranged for connection with a high speed ground plane of the IC chip;
an integrated circuit (IC) package mounted on the mother board and configured to comprise both high speed and low speed electronic circuitry, the IC package comprises:
a substrate having a first surface and a second surface with an integrated circuit die construction mounted on the substrate, the die construction including both high speed and low speed electronic circuitry;
a first ground plane electrically connected with the low speed electronic circuitry of the IC and also electrically connected with first low speed ground system of the motherboard;
a plurality of electrical connections that electrically connect the first ground plane with solder balls mounted on the second surface of the substrate;
a second ground plane that is spatially separated and electrically isolated from the first ground plane, the second ground plane connected with the high speed electronic circuitry of the IC and also electrically connected with second high speed ground system of the motherboard;
a plurality of additional electrical connections that electrically connect the second ground plane with solder balls mounted on the second surface of the substrate; and
a first set of I/O contacts electrically separated from one another and defining a first differential impedance between the contacts of the first set of I/O contacts, the first set of I/O contacts electrically connected with the low speed circuitry of the IC, and
a second set of I/O contacts electrically separated from one another and defining a second differential impedance between the contacts of the second set of I/O contacts, the second set of I/O contacts electrically connected with the high speed circuitry of the IC, said second differential impedance being greater than said first differential impedance.
9. A semiconductor integrated circuit package as recited in claim 8 wherein the integrated circuit die construction includes a first die having the low speed electronic circuitry mounted with a second die having the high speed electronic circuitry.
10. The IC package as recited in claim 8 wherein the first set of I/O contacts has a greater contact density than the second set of I/O contacts.
11. The IC package as recited in claim 8 wherein the first set of I/O contacts has a first spacing distance that separates the contacts of the first set of I/O contacts, and a second set of I/O contacts has a second spacing distance that separates the contacts of the second set of I/O contacts, wherein the first spacing distance is greater than the second spacing distance.
12. A semiconductor integrated circuit package as recited in claim 8 wherein the substrate comprises peripheral electrical contacts arranged on the substrate to connect with the high speed electronic circuitry and the low speed electronic circuitry and further electrically connected to circuitry external to the substrate;
wherein the peripheral electrical contacts include a first set of low speed peripheral contacts configured in a spaced apart arrangement such that a first intervening distance between adjacent contacts includes a first dielectric material, such that the dielectric properties of the first dielectric material and the spacing defined by said first intervening distance is sufficient to substantially eliminate cross-talk between the contacts of the first set of low speed peripheral contacts when low speed electronic signals are passed through the contacts; and
wherein the peripheral electrical contacts include a second set of high speed peripheral contacts configured in a spaced apart arrangement such that a second intervening distance between adjacent contacts includes a second dielectric material, such that the dielectric properties of the second dielectric material and the spacing defined by said second intervening distance is sufficient to substantially eliminate cross-talk between the contacts of the second set of high speed peripheral contacts when high speed electronic signals are passed through the contacts.
13. A semiconductor integrated circuit package as recited in claim 12 ,
wherein the first set of peripheral contacts is electrically coupled with the low speed electronic circuitry of the integrated circuit die construction; and
wherein the second set of peripheral contacts is electrically coupled with the high speed electronic circuitry of the integrated circuit die construction.
14. The IC package as recited in claim 8 wherein the first set of I/O contacts has a first spacing distance that separates the contacts of the first set of I/O contacts, and a second set of I/O contacts has a second spacing distance that separates the contacts of the second set of I/O contacts, wherein the first spacing distance establishes a first differential impedance between the contacts of the first set of I/O contacts, and wherein the second spacing distance establishes a second differential impedance between the contacts of the second set of I/O contacts, wherein the second differential impedance is greater than the first differential impedance.
15. The IC package as recited in claim 14 wherein the first spacing distance includes a first dielectric material between the contacts of the first set of I/O contacts and the second spacing distance includes a second dielectric material between the contacts of the second set of I/O contacts, wherein the first dielectric material establishes the first differential impedance and wherein the second dielectric material establishes the second differential impedance, wherein the second differential impedance is greater than the first differential impedance.