On-track process for patterning hardmask by multiple dark field exposures

1. A method of forming a microelectronic structure, said method comprising:

(a) providing a substrate having a surface;

(b) applying a hardmask composition adjacent the substrate surface, said hardmask composition comprising a polymer dispersed or dissolved in a solvent system, said polymer comprising recurring monomers of

where:

each R 1 is individually selected from the group consisting of —H, and alkyl groups; and

each R 2 is individually selected from the group consisting of —H, and silicon-containing moieties selected from the group consisting of

 where each R 3 is selected from the group consisting of alkyl groups, and each R 4 is selected from the group consisting of n-butyl, t-butyl, and alkyl groups, and wherein at least one of said R 2 is a silicon-containing moiety;

(c) baking said hardmask composition to yield a hardmask layer;

(d) applying a photosensitive composition to form a first imaging layer on top of said hardmask layer;

(e) exposing said first imaging layer to activating radiation to yield exposed portions in said first imaging layer;

(f) contacting said first imaging layer with a developer so as to remove said exposed portions of said first imaging layer, wherein said contacting also results in the removal of portions of said hardmask layer beneath said exposed portions in said first imaging layer, yielding a patterned hardmask layer;

(g) contacting said first imaging layer with an organic solvent so as to remove said first imaging layer; and

(h) applying a second photosensitive composition to form a second imaging layer on top of said patterned hardmask layer, without applying additional hardmask composition to said substrate.

2. The method of claim 1 , further comprising the step of applying an intermediate layer to said substrate prior to applying said hardmask layer.

3. The method of claim 1 , said wherein no dry etching occurs during (a)-(h).

4. The method of claim 1 , wherein the pattern of said patterned hardmask layer remains intact during (g).

5. The method of claim 1 , wherein said first imaging layer is a photoresist.

6. The method of claim 1 , wherein said first imaging layer has a thickness of from about 20 nm to about 200 nm.

7. The method of claim 1 , wherein said hardmask composition is thermally crosslinked during (c) yielding a cured hardmask layer.

8. The method of claim 1 , said hardmask layer having an initial solubility in a base developer, wherein:

said exposing (e) further comprises exposing at least a portion of said hardmask layer to activating radiation to yield exposed portions of said hardmask layer, said exposed portions of said hardmask layer having a final solubility in base developer, said final solubility being greater than said initial solubility.

9. The method of claim 1 , further comprising:

(i) exposing said second imaging layer to activating radiation to yield exposed portions in said second imaging layer;

(j) contacting said second imaging layer with a developer so as to remove said exposed portions, wherein said contacting also results in the removal of portions of said hardmask layer beneath said exposed portions in said second imaging layer, yielding a further patterned hardmask layer; and

(k) contacting said second imaging layer with an organic solvent so as to remove said second imaging layer.

10. The method of claim 9 , wherein the pattern of the patterned hardmask layer formed in (j) remains intact during (k).

11. The method of claim 9 , wherein no dry etching occurs during (a)-(k).

12. The method of claim 9 , further comprising:

(l) transferring the pattern of the patterned hardmask layer formed in (j) to the substrate.

13. The method of claim 12 , wherein (l) comprises etching said patterned hardmask layer and substrate.

14. The method of claim 12 , wherein the pattern of said patterned hardmask layer comprises vias and trenches.