Method for manufacturing semiconductor device
A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO 2 film and including the multilayer interconnection structure; forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.
1. A method of manufacturing a semiconductor device, comprising:
forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a plurality of interlayer insulating films lower in dielectric constant than a SiO 2 film and including the multilayer interconnection structure;
forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate;
forming a film including Si and C as principal components and covering sidewall surfaces and a bottom surface of the groove; and
forming a protection film on the film along the sidewall surfaces and the bottom surface of the groove.
2. A method of manufacturing a semiconductor device, comprising:
forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body including the multilayer interconnection structure;
forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate; and
forming a protection film covering sidewall surfaces and a bottom surface of the groove,
wherein the groove is formed using a metal pattern formed on the multilayer interconnection structure as a mask.
3. A method of manufacturing a semiconductor device, comprising:
forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body including the multilayer interconnection structure;
forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate;
forming a protection film covering a first sidewall surface, a bottom surface, and a second sidewall surface of the groove, the first sidewall surface being closer to the moisture resistant ring than the second sidewall surface is, the second sidewall surface being closer to the scribe line than the first sidewall surface is; and
at least partially removing a part of the protection film covering the second sidewall surface of the groove.
4. A method of manufacturing a semiconductor device, comprising:
forming a moisture resistant ring in a multilayer interconnection structure included in a layered body;
forming a groove in the layered body between the moisture resistant ring and a scribe line, the groove reaching a surface of a semiconductor substrate;
forming an insulating protection film covering sidewall surfaces and a bottom surface of the groove; and
removing the insulating protection film on an upper surface of the layered body on an outer side of the groove.
5. The method of manufacturing a semiconductor device as claimed in claim 4 , wherein said removing removes a first part of the insulating protection film on the upper surface of the layered body on the outer side of the groove with a second part of the insulating protection film covering the upper surface of the layered body on an inner side of the groove.