Methods of making multilayered structures

1. A method of making a multilayered structure, comprising:

growing a diamond layer on a substrate, wherein the bottom surface of the diamond rests on the substrate;

applying a first thin adhesion layer on the top surface of the diamond layer;

applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;

removing the substrate;

applying a second thin adhesion layer on the bottom surface of the diamond layer; and

applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, and the second metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first and second thin adhesion layers is less than 10% compared to the thickness of each of the first and second metal layers.

2. The method of claim 1 , wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

3. The method of claim 1 , further comprising determining the value of the coefficient of thermal expansion at the surface of the first metal layer by using the ratio of the thicknesses, the Young's modulus and the coefficients of thermal expansion of the first metal layer, the second metal layer, and the diamond layer.

4. The method of claim 1 , further comprising determining the thickness of the diamond layer by the following equation:

t D =t M1 ×( E D /E M1 )×((CTE M1 −CTE C )/(CTE C −CTE D ))+ t M2 ×( E D /E M2 )×((CTE M2 −CTE C )/(CTE C −CTE D )), wherein as follows:

t D =thickness of the diamond layer

t M1 =thickness of the first metal layer

t M2 =thickness of the second metal layer

E D =Young's modulus of the diamond layer

E M1 =Young's modulus of the first metal layer

E M2 =Young's modulus of the second metal layer

CTE D =coefficient of thermal expansion of the diamond layer

CTE M1 =coefficient of thermal expansion of the first metal layer

CTE M2 =coefficient of thermal expansion of the second metal layer

CTE C =coefficient of thermal expansion for surface of the multilayered structure.

5. The method of claim 1 , further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

6. The method of claim 1 , further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

7. A method of making a multilayered structure, comprising:

growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;

growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;

brazing the top surface of the first diamond layer to the top surface of the second diamond layer wherein the brazing alloy adheres to the first and second diamond layers and has a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K;

removing the first and second substrates;

applying a first thin adhesion layer on the bottom surface of the first diamond layer;

applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;

applying a second thin adhesion layer on the bottom surface of the second diamond layer; and

applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, and the second metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first and second thin adhesion layers is less than 10% compared to the thickness of each of the first and second metal layers.

8. The method of claim 7 , wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

9. The method of claim 7 , further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

10. The method of claim 7 , further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

11. The method of claim 7 , wherein the brazing alloy is selected from a group of metals consisting of copper, silver, gold, tin, and/or indium.

12. The method of claim 7 , further comprising determining the thickness of the diamond layer by the following equation:

t D =t M1 ×( E D /E M1 )×((CTE M1 −CTE C )/(CTE D −CTE D ))+ t M2 ×( E D /E M2 )×((CTE M2 −CTE C )/(CTE C −CTE D )) wherein as follows:

t D =thickness of each of the first and second diamond layers

t M1 =thickness of the first outer metal layer

t M2 =thickness of the second outer metal layer

E D =Young's modulus of the first diamond layer

E M1 =Young's modulus of first metal layer

E M2 =Young's modulus of the second metal layer

CTE D =coefficient of thermal expansion of the first diamond layer

CTE M1 =coefficient of thermal expansion of first metal layer

CTE M2 =coefficient of thermal expansion of second metal layer

CTE C =coefficient of thermal expansion for surface of multilayered structure.

13. The method of claim 7 , wherein the brazing alloy includes a carbide forming metal.

14. The method of claim 13 , wherein the carbide forming metal is selected from a group of metals consisting of titanium, chromium, tungsten, tantalum, vanadium, niobium, hafnium, zirconium or nickel.

15. A method of making a multilayered structure, comprising:

growing a first diamond layer on a first substrate, wherein the bottom surface of the first diamond layer rests on the first substrate;

applying a first thin adhesion layer on the top surface of the first diamond layer;

applying a first metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the first thin adhesion layer;

growing a second diamond layer on a second substrate, wherein the bottom surface of the second diamond layer rests on the second substrate;

applying a second thin adhesion layer on the top surface of the second diamond layer;

applying a second metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the second thin adhesion layer;

brazing or soldering the top surface of the first metal layer to the top surface of the second metal layer;

removing the first and second substrates;

applying a third thin adhesion layer on the bottom surface of the first diamond layer;

applying a third metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the third thin adhesion layer;

applying a fourth thin adhesion layer on the bottom surface of the second diamond layer; and

applying a fourth metal layer having a thermal conductivity greater than 200 W/m-K and a coefficient of thermal expansion greater than 12 ppm/K on the fourth thin adhesion layer, wherein a CTE matching equation determines the thickness of the diamond layer, the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer such that the CTE of the multilayered structure matches the CTE of a semiconductor, wherein the thickness of each of the first thin adhesion layer, the second thin adhesion layer, the third thin adhesion layer, and the fourth thin adhesion layer is less than 10% compared to the thickness of each of the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer.

16. The method of claim 15 , wherein the diamond layers are made electrically conductive by adding a p-type dopant to the diamond during the diamond growth step.

17. The method of claim 15 , further comprising depositing additional layers of metal on the first metal layer to facilitate attachment of an electronic or optical component.

18. The method of claim 15 , further comprising patterning the first metal layer and the first thin adhesion layer into electrically isolated regions.

19. The method of claim 15 , wherein the brazing alloy is selected from a group of metals consisting of copper, silver, gold, tin, and/or indium.

20. The method of claim 15 , wherein the solder alloy is selected from a group of metals consisting of silver, gold, tin, indium, germanium, lead, antimony, palladium and/or silicon.

21. The method of claim 15 , further comprising determining the thickness of the diamond layer by the following equation:

t D =t M1 ×( E D /E M1 )×((CTE M1 −CTE C )/(CTE C −CTE D ))+ t M2 ×( E D /E M2 )×((CTE M2 −CTE C )/(CTE C −CTE D )) wherein as follows:

t D =thickness of each of the first and second diamond layers

t M1 =thickness of the first outer metal layer

t M2 =thickness of the second outer metal layer

E D =Young's modulus of the first diamond layer

E M1 =Young's modulus of first metal layer

E M2 =Young's modulus of the second metal layer

CTE D =coefficient of thermal expansion of the first diamond layer

CTE M1 =coefficient of thermal expansion of first metal layer

CTE M2 =coefficient of thermal expansion of second metal layer

CTE C =coefficient of thermal expansion for surface of multilayered structure.