Electrostatic discharge structure for 3-dimensional integrated circuit through-silicon via device
An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device is provided. The ESD structure includes a substrate, a TSV device which is formed through the substrate and is equivalent to a resistance-inductance-capacitance (RLC) device, and at least one ESD device which is disposed in the substrate and electrically connected to one end of the TSV device. The ESD structure can protect the 3D IC TSV device.
1. An electrostatic discharge (ESD) structure for a 3-dimensional (3D) integrated circuit (IC) through-silicon via (TSV) device, comprising:
a substrate;
a TSV device, formed through the substrate, wherein the TSV device is equivalent to a resistance-inductance-capacitance (RLC) device; and
at least one ESD device, located in the substrate and electrically connected to one end of the TSV device.
2. The ESD structure according to claim 1 , wherein the ESD device comprises a semiconductor junction diode.
3. The ESD structure according to claim 2 , wherein the substrate comprises a p-type substrate, and the ESD device comprises:
an N+ region, surrounding the TSV device; and
a P+ region, surrounding the N+ region, wherein a distance is kept between the P+ region and the N+ region.
4. The ESD structure according to claim 3 , wherein the N+ region of the ESD device is electrically connected to one end of the TSV device.
5. The ESD structure according to claim 2 , wherein the substrate comprises a p-type substrate, and the ESD device comprises:
N-well, surrounding the TSV device;
a P+ region, located in the N-well, and surrounding the TSV device; and
an N+ region, located in the N-well, and surrounding the P+ region, wherein a distance is kept between the N+ region and the P+ region.
6. The ESD structure according to claim 5 , wherein the P+ region of the ESD device is electrically connected to one end of the TSV device.
7. The ESD structure according to claim 1 , comprising two ESD devices, wherein the two ESD devices are electrically connected to each end of the TSV device respectively.
8. The ESD structure according to claim 7 , wherein the substrate comprises an upper substrate and a lower substrate;
one end of the TSV device is located on an upper surface of the upper substrate;
another end of the TSV device is located on a lower surface of the lower substrate; and
the two ESD devices are respectively located on the upper surface of the upper substrate and the lower surface of the lower substrate.
9. The ESD structure according to claim 8 , wherein the two ESD devices at least comprise two semiconductor junction diodes.
10. The ESD structure according to claim 9 , wherein the, upper substrate is a p-type substrate, and the ESD device located on the upper surface of the upper substrate comprises:
an N+ region, surrounding the TSV device; and
a P+ region, surrounding the N+ region, wherein a distance is kept between the P+ region and the N+ region.
11. The ESD structure according to claim 10 , wherein the N+ region of the ESD device is electrically connected to the end of the TSV device located on the upper surface of the upper substrate.
12. The ESD structure according to claim 9 , wherein the lower substrate is a p-type substrate, and the ESD device located on the lower surface of the lower substrate comprises:
an N-well, surrounding the TSV device;
a P+ region, located in the N-well, and surrounding the TSV device; and
an N+ region, located in the N-well, and surrounding the P+ region, wherein a distance is kept between the N+ region and the P+ region.
13. The ESD structure according to claim 12 , wherein the P+ region of the ESD device is electrically connected to the end of the TSV device located on the lower surface of the lower substrate.
14. The ESD structure according to claim 7 , wherein the substrate comprises an upper surface and a lower surface;
one end of the TSV device is located on the upper surface;
another end of the TSV device is located on the lower surface; and
the two ESD devices are respectively located on the upper surface and the lower surface.
15. The ESD structure according to claim 14 , wherein the two ESD devices at least comprise two semiconductor junction diodes.
16. The ESD structure according to claim 15 , wherein the substrate is a p-type substrate, and the ESD device located on the upper surface or the lower surface comprises:
an N+ region, surrounding the TSV device; and
a P+ region, surrounding the N+ region, wherein a distance is kept between the P+ region and the N+ region.
17. The ESD structure according to claim 16 , wherein the N+ region of the ESD device is electrically connected to the end of the TSV device located on the upper surface.
18. The ESD structure according to claim 15 , wherein the substrate is a p-type substrate, and the ESD device located on the upper surface or the lower surface comprises:
an N-well, surrounding the TSV device;
a P+ region, located in the N-well, and surrounding the TSV device; and
an N+ region, located in the N-well, and surrounding the P+ region, wherein a distance is kept between the N+ region and the P+ region.
19. The ESD structure according to claim 18 , wherein the P+ region of the ESD device is electrically connected to the end of the TSV device located on the lower surface.
20. The ESD structure according to claim 7 , wherein the TSV device comprises:
at least two TSVs, respectively located in a first region and a second region of the substrate and formed through the substrate; and
a conductive line, located on a back side of the substrate for connecting the two TSVs; and
the two ESD devices, respectively located on a front side of the first region of the substrate and a front side of the second region of the substrate.
21. The ESD structure according to claim 20 , wherein the two ESD devices comprise two semiconductor junction diodes.
22. The ESD structure according to claim 21 , wherein the substrate comprises a p-type substrate, and the ESD device located on the front side of the first region comprises:
an N+ region, surrounding the TSV in the first region; and
a P+ region, surrounding the N+ region, wherein a distance is kept between the P+ region and the N+ region.
23. The ESD structure according to claim 22 , wherein the N+ region of the ESD device is electrically connected to the TSV in the first region on a front side of the substrate.
24. The ESD structure according to claim 21 , wherein the substrate comprises a p-type substrate, and the ESD device located on the front side of the second region comprises:
an N-well, surrounding the TSV in the second region;
a P+ region, located in the N-well, and surrounding the TSV device in the second region; and
an N+ region, located in the N-well, and surrounding the P+ region, wherein a distance is kept between the N+ region and the P+ region.
25. The ESD structure according to claim 24 , wherein the P+ region of the ESD device is electrically connected to the TSV in the second region on the front side of the substrate.
26. The ESD structure according to claim 1 , wherein the substrate comprises a silicon substrate.
27. The ESD structure according to claim 1 , further comprising an insulating layer disposed between the substrate and the TSV device.