Semiconductor processing apparatus and method for using same
A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.
1. A method for using a vertical semiconductor processing apparatus configured to process a plurality of target substrates placed at intervals in a vertical direction inside a process container which has an inner surface containing, as a main component, a material selected from the group consisting of quartz and silicon carbide, the method comprising:
supplying O 2 gas and H 2 gas into the process container accommodating no product target substrate therein;
causing the O 2 gas and the H 2 gas to react with each other within a first atmosphere that activates the O 2 gas and the H 2 gas inside the process container only by heating the process container, thereby generating radicals; and
removing a contaminant from the inner surface of the process container by use of the radicals, the contaminant being a contaminant containing a metal.
2. The method according to claim 1 , wherein the first atmosphere is set to have a temperature of 400 to 1,100° C.
3. The method according to claim 1 , wherein the first atmosphere is set to have a pressure of 0.133 to 933 Pa.
4. The method according to claim 1 , wherein, before said supplying O 2 gas and H 2 gas, the method further comprises supplying a preparatory reducing gas into the process container accommodating no product target substrate therein, thereby performing preparatory reduction of the contaminant within a preparatory atmosphere that activates the preparatory reducing gas.
5. The method according to claim 4 , wherein the contaminant is a contaminant containing a metal oxide.
6. The method according to claim 5 , wherein the metal oxide comprises oxide of one or more elements selected from the group consisting of Cu, Ni, and Fe.
7. The method according to claim 4 , wherein the preparatory atmosphere is set to have a temperature of 700 to 1,000° C.
8. The method according to claim 4 , wherein the preparatory atmosphere is set to have a pressure of 0.133 to 15,999 Pa.
9. The method according to claim 4 , wherein the preparatory reducing gas is a gas the same as or different from the H 2 gas.
10. The method according to claim 1 , wherein, before said supplying O 2 gas and H 2 gas, the method further comprises forming a film by CVD on product target substrates inside the process container.
11. The method according to claim 10 , wherein, between said forming a film and said supplying O 2 gas and H 2 gas, the method further comprises removing a by-product film deposited on the inner surface of the process container, by use of a film removing gas.
12. The method according to claim 11 , wherein said forming a film by CVD comprises supplying a first film formation gas comprising a silicon-containing gas and a second film formation gas comprising a gas selected from the group consisting of a nitriding gas, an oxidation gas, and an oxynitriding gas into the process container, thereby forming a film of a substance selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride.
13. The method according to claim 12 , wherein the film removing gas comprises a gas containing a halogen element and hydrogen element.
14. A computer readable medium containing program instructions for execution on a processor in a vertical semiconductor processing apparatus configured to process a plurality of target substrates placed at intervals in a vertical direction inside a process container which has an inner surface containing, as a main component, a material selected from the group consisting of quartz and silicon carbide, wherein the program instructions, when executed by the processor, control the apparatus to execute the steps of:
supplying O 2 gas and H 2 gas into the process container accommodating no product target substrate therein;
causing the O 2 gas and the H 2 gas to react with each other within an atmosphere that activates the O 2 gas and the H 2 gas inside the process container only by heating the process container, thereby generating radicals; and
removing a contaminant from the inner surface of the process container by use of the radicals, the contaminant being a contaminant containing a metal.