Reconfigurable electric circuitry and method of making same
A reconfigurable electric circuit includes first and second crystalline material layers positioned adjacent to each other and forming a first interface, and a first ferroelectric layer positioned adjacent to the first crystalline material layer and having ferroelectric domains applying an electric field to regions of the first interface to induce a quasi two-dimensional electron gas in the regions, wherein at least one of the regions forms a gate and at least one of the regions forms a channel.
1. An apparatus comprising:
first and second crystalline material layers positioned adjacent to each other and forming a first heterointerface;
a third crystalline material layer positioned adjacent to the second crystalline material layer and forming a second heterointerface;
a first ferroelectric layer positioned adjacent to the first crystalline material layer and having a ferroelectric domain applying an electric field to a first region of the first heterointerface to induce a quasi two-dimensional electron gas in the first region of the first heterointerface; and
a second ferroelectric layer positioned adjacent to the third crystalline material layer and having a ferroelectric domain applying an electric field to a first region of the second heterointerface to induce a quasi two-dimensional electron gas in the first region of the second heterointerface.
2. The apparatus of claim 1 , wherein the crystalline material layers comprise one of:
an oxide-based dielectric, or a semiconductor.
3. The apparatus of claim 1 , wherein:
the ferroelectric layers comprise one of: Pb(Zr,Ti)O 3 , BiFeO 3 , BaTiO 3 , or strained SrTiO 3 ; and
the first and second crystalline material layers comprise one of: SrTiO 3 , PbVO 3 , LaAlO 3 , LaMnO 3 , LaCaMnO 3 , LaSrMnO 3 , or a doped silicon, germanium, or GaAs.
4. The apparatus of claim 1 , wherein the
first ferroelectric layer further includes a plurality of ferroelectric domains applying an electric field to the first heterointerface; and wherein the
the second ferroelectric layer includes a plurality of ferroelectric domains applying an electric field to the second heterointerface.
5. The apparatus of claim 4 , further comprising:
a substrate;
a first oxide layer, on the substrate; and
a second oxide layer on the first oxide layer, wherein the second ferroelectric layer is on the second oxide layer.
6. The apparatus of claim 5 , wherein the first oxide layer comprises one of SrTiO 3 , DyScO 3 , or GdScO 3 , and the second oxide layer comprises one of SrRrO 3 , or LaSrCoO 3 , on the SrTiO 3 , DyScO 3 , or GdScO 3 .
7. The apparatus of claim 1 , further comprising:
a substrate;
a first oxide layer, on the substrate; and
a second oxide layer on the first oxide layer, wherein the second ferroelectric layer is on the second oxide layer.
8. The apparatus of claim 7 , in the first oxide layer comprises one of SrTiO 3 , DyScO 3 , or GdScO 3 , and the second oxide layer comprises one of SrRrO 3 , or LaSrCoO 3 , on the SrTiO 3 , DyScO 3 , or GdScO 3 .
9. The apparatus of claim 1 , wherein the first region of the first heterointerface forms a gate, and wherein the first region of the second heterointerface forms a channel.
10. The apparatus of claim 9 , wherein the first and second ferroelectric layers have a coercive voltage greater than a gate voltage for turning on the channel.