Integrated circuit

1. An integrated circuit comprising:

a plurality of memory cells;

a plurality of fuses;

a redundant memory having a function of repairing a defective cell included in the plurality of memory cells by placing a corresponding fuse among the plurality of fuses into a first state;

a fuse data conversion circuit that generates first information of a first defective cell based on position information of the fuse placed into the first state, the fuse corresponding to the first defective cell having been repaired;

a repair data generation circuit that generates, upon detection of a second defective cell as a result of a test for the plurality of memory cells, repair information for repairing the second defective cell according to the first information of the first defective cell and second information of the second defective cell detected; and

a fuse state change circuit that places a predetermined fuse among the plurality of fuses into the first state according to the repair information generated by the repair data generation circuit.

2. The integrated circuit according to claim 1 , wherein the repair data generation circuit comprises:

a holding unit that holds the first information of the first defective cell received from the fuse data conversion circuit; and

a repair data setting unit that sets repair information corresponding to the second information of the second defective cell, when a data value of the second information of the second defective cell detected as a result of the test for the plurality of memory cells is different from a data value of the first information of the first defective cell held in the holding unit.

3. The integrated circuit according to claim 2 , wherein the repair data generation circuit further comprises a test unit that performs a test on the plurality of memory cells.

4. The integrated circuit according to claim 1 , further comprising a test circuit that performs a test on the plurality of memory cells,

wherein the repair data generation circuit comprises:

a storage unit that stores the second information of the second defective cell detected as a result of the test performed by the test circuit;

a holding unit that holds the first information of the first defective cell received from the fuse data conversion circuit; and

a repair data setting unit that sets repair information corresponding to the second information of the second defective cell, when a data value of the second information of the second defective cell stored in the storage unit is different from a data value of the first information of the first defective cell held in the holding unit.

5. The integrated circuit according to claim 1 , wherein the first state is a state in which a fuse is cut.

6. The integrated circuit according to claim 5 , wherein the fuse data conversion circuit comprises:

a fuse data readout circuit that reads out position information of a cut fuse corresponding to the first defective cell; and

a repair data conversion circuit that converts the position information of the cut fuse into the first information of the first defective cell, the position information being read out by the fuse data readout circuit.

7. The integrated circuit according to claim 5 , wherein the fuse state change circuit comprises:

a fuse data conversion circuit that generates position information of a fuse to be cut, according to the repair information from the repair data generation circuit; and

a fuse cut circuit that cuts a fuse corresponding to the position information of the fuse received from the fuse data conversion circuit.